Patents Examined by Kin-Clan Chen
  • Copper interconnect methodology for enhanced electromigration resistance
    Patent number: 6022808
    Abstract: Copper interconnects with enhanced electromigration are formed by filling a via/contact hole and/or trench in a dielectric layer with undoped Cu. A Cu layer containing a dopant element, such as Pd, Zr or Sn is deposited on the undoped Cu contact/via and/or line. Annealing is then conducted to diffuse the dopant element into the copper contact/via and/or line to improve its electromigration resistance. CMP is then performed.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: February 8, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Takeshi Nogami, Shekhar Pramanick, Dirk Brown