Abstract: One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate. The backside of the silicon lamina includes the P-type and N-type doped regions. A metal foil is attached to the backside of the silicon lamina. The metal foil may be used advantageously as a built-in carrier for handling the silicon lamina during processing of a frontside of the silicon lamina. Another embodiment relates to a solar cell that includes a silicon lamina having P-type and N-type doped regions on the backside. A metal foil is adhered to the backside of the lamina, and there are contacts formed between the metal foil and the doped regions. Other embodiments, aspects and features are also disclosed.
Abstract: In various embodiments, a tabbing ribbon for connecting at least one solar cell is provided, wherein the tabbing ribbon at least partially extends in a non-planar manner and includes a non-planar section.
Abstract: Embodiments of the invention provide electrochemical analyte sensors having elements designed to modulate their electrochemical reactions as well as methods for making and using such sensors.
Type:
Grant
Filed:
March 25, 2010
Date of Patent:
January 10, 2017
Assignee:
Medtronic MiniMed, Inc.
Inventors:
Rajiv Shah, Rebecca K. Gottlieb, Gopikrishnan Soundararajan, James D. Holker
Abstract: An aspect of the present invention provides a stacked photovoltaic device that comprises a first power generating unit including a first semiconductor layer made of a substantially intrinsic non-single crystal semiconductor layer which functions as a photoelectric conversion layer; and a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor layer which functions as a photoelectric conversion layer. In the stacked photovoltaic device, a first density of an element mainly constituting the first semiconductor layer of the first power generating unit is lower than a second density of an element mainly constituting the second semiconductor layer of the second power generating unit.