Abstract: A substrate support unit includes a substrate support member that supports a substrate, the substrate support member being provided with one or more pin holes vertically penetrating the substrate support member, and a lift pin assembly provided to be lifted along a corresponding pin hole. The lift pin assembly includes lift pins, each lift pin having an upper end contacting the substrate and supporting the substrate, and a pin drive unit that is coupled to the lift pins and lifts the lift pins. The pin drive unit includes piezoelectric motors below the lift pins, respectively.

Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

Abstract: Described herein is a technique capable of forming a film so as to fill a recess of a substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table on which a substrate is placed; an adsorption inhibiting gas supplier configured to supply an adsorption inhibiting gas onto a surface of the substrate from above the substrate mounting table; and a source gas supplier configured to supply a source gas onto the surface of the substrate from above the substrate mounting table, wherein a distance D1 between a gas supply port provided in the adsorption inhibiting gas supplier and the substrate is greater than a distance D2 between a gas supply port provided in the source gas supplier and the substrate.

Abstract: A purge nozzle assembly comprising a purge nozzle body including an inlet opening and an outlet opening. The outlet opening opens into a purge nozzle contact surface. Additionally, the purge nozzle assembly includes a mounting body for connecting the purge nozzle assembly to an external frame member. A mechanical coupling mechanism moveably couples the purge nozzle body with the mounting body and is configured to allow tilting of the purge nozzle body relative to the mounting body as well as to allow a substantial lateral movement of the purge nozzle body relative to the mounting body, wherein the lateral movement has a movement component which is substantially parallel to the purge nozzle contact surface.

Abstract: An apparatus for treating a substrate is disclosed. The apparatus includes a radio frequency (RF) power source to apply an RF signal to excite a process gas to be in a plasma state. A supporting unit to support the substrate includes an edge ring to surround the substrate, a coupling ring disposed under the edge ring and including an electrode in the coupling ring, and an edge impedance control circuit connected with the electrode. The edge impedance control circuit includes a harmonic control circuit unit to control a harmonic generated from the RF power source, an ion flux control circuit unit to adjust an ion flux of an edge region of the substrate, and a cable impedance control circuit unit to adjust an impedance made due to a length of the RF cable.

Abstract: The inventive concept provides a substrate support unit comprising a chuck supporting and rotating a substrate; and a lamp unit provided below the substrate to heat the substrate, wherein the lamp unit comprises a first lamp having a reflective layer on the surface thereof, to block and/or reflect a light which is emitted from the first lamp but not directed to the substrate to direct the light to the substrate.

Abstract: A removable tool for consolidation or densification in the gas phase of at least one fibrous preform configured to be arranged in an oven, the removable tool including a homogenization chamber including at least one gas inlet orifice and a depletion chamber including at least one gas outlet orifice, the removable tool further including a reaction chamber arranged between the homogenization chamber and the depletion chamber and configured to receive at least one fibrous preform, the reaction chamber being separated from the homogenization chamber and the depletion chamber by perforated plates.

Abstract: An upward laminar flow of a treatment fluid is formed inside a treatment chamber. Substrates are immersed in the treatment fluid. Eight bubble supply pipes are disposed inside the treatment chamber, and supply bubbles in the treatment fluid from below the substrates. Two innermost bubble supply pipes out of the eight bubble supply pipes are disposed inside a recess of a punching plate so that the two bubble supply pipes are lower than the other bubble supply pipes. Even when a lifter lowers the substrates to an immersion position, an extremity of a back plate is prevented from hitting the two bubble supply pipes. Furthermore, the eight bubble supply pipes including the two innermost bubble supply pipes can uniformly supply bubbles to the surface of the substrates.

Abstract: The apparatus includes a plasma chamber and a process chamber separated by an ion blocker. A plasma power source excites a first treatment gas into radicals, which mix with a second treatment gas in the process chamber to treat a substrate. A controller manages gas flow and power for cyclic treatments.

Abstract: A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.

Abstract: Pump liners and process chambers with the pump liners are described. The pump liner has a ring-shaped body with an annular wall enclosing a process region. A plurality of circumferentially spaced openings provide fluid communication through the annular wall between the process region and a region outside of the ring-shaped body. Each of the plurality of circumferentially spaced openings has a self-adjusting valve assembly. Self-adjusting valves and processing methods are also described.

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.

Abstract: An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.

Abstract: There is provided a technique capable of detoxifying a process gas even when the detoxification apparatus is stopped. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube; a process gas supplier; an exhauster; an exhaust gas process chamber in which the exhausted process gas is subject to a process; a first inert gas supplier; a second inert gas supplier; an exhaust pipe; and a controller controlling the first and the second inert gas supplier such that the first inert gas is supplied to the exhaust gas process chamber through the first inert gas supplier while the process gas is subject to the process in the exhaust gas process chamber and the second inert gas is supplied to the exhaust gas process chamber through the second inert gas supplier when the process in the exhaust gas process chamber is stopped.

Abstract: A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.

Abstract: A vapor phase growth apparatus of embodiments includes: a reactor; a holder provided in the reactor to place a substrate thereon; an annular out-heater provided below the holder; an in-heater provided below the out-heater; a disk-shaped upper reflector provided below the in-heater and formed of pyrolytic graphite; and a disk-shaped lower reflector provided below the upper reflector, formed of silicon carbide, and having a thickness smaller than that of the upper reflector.

Abstract: The disclosure provides a substrate cleaning device and a substrate processing device capable of suppressing erroneous rotation detection of an optical sensor due to adhesion of droplets or mist. A substrate cleaning device includes a substrate cleaning part for cleaning a substrate, a drive roller for rotating the substrate, a driven roller rotated by the substrate, and a rotation detection part for detecting rotation of the driven roller. The rotation detection part includes a detected part provided on the driven roller, an optical sensor for detecting rotation of the detected part by irradiation with detection light, and a liquid filling part for filling an optical path forming space in which an optical path of the detection light is formed with a liquid having transmittance.

Abstract: A plasma generator may include a dielectric tube, an inner helical coil surrounding the dielectric tube and configured to generate plasma by forming a stationary wave of at least one of a magnetic field and an electromagnetic wave in the dielectric tube, a variable capacitor configuring a closed loop with the inner helical coil, an outer helical coil surrounding the inner helical coil and magnetically coupled to the inner helical coil, and a radio frequency (RF) power supply configured to provide RF power at a variable frequency to the inner helical coil.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to promote thermal control of the showerhead in high-temperature applications.

Abstract: A substrate support for a substrate processing system includes a baseplate, a ceramic layer arranged on the baseplate, and a carrier ring arranged on the ceramic layer. The ceramic layer has a first outer diameter, the carrier ring has a second outer diameter that is less than the first outer diameter, the ceramic layer includes a shoulder that extends from the second outer diameter of the carrier ring to the first outer diameter, and the shoulder slopes downward toward the first outer diameter.