Abstract: An apparatus for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.

Abstract: Exemplary semiconductor processing systems may include a pumping system, a chamber body that defines a processing region, and a pumping liner disposed within the processing region. The pumping liner may define an annular member characterized by a wall that defines an exhaust aperture coupled to the pumping system. The annular member may be characterized by an inner wall that defines a plurality of apertures distributed circumferentially along the inner wall. A plenum may be defined in the annular member between interior surfaces of the walls. A divider may be disposed within the plenum, where the divider separates the plenum into a first plenum chamber and a second plenum chamber, wherein the first plenum chamber is fluidly accessible from the apertures defined through the inner wall, and wherein the divider defines at least one aperture providing fluid access between the first plenum chamber and the second plenum chamber.

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Abstract: A plasma generating system generates plasma in a processing chamber. A controller is configured to: a) perform atomic layer deposition (ALD) N times to deposit film in a feature of the substrate; b) after performing a) M of the N times, supply an inhibitor plasma gas to the processing chamber and strike plasma in the processing chamber to create a passivated surface more on upper portions of the feature as compared to lower portions of the feature to inhibit the atomic layer deposition in the upper portions of the feature as compared to the lower portions of the feature; c) supply an etch gas to the processing chamber to etch the film more in the upper portions of the feature than in the lower portions in the feature of the substrate following b); and d) repeat a) to c) one or more times to gapfill the feature without voids.

Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

Abstract: A semiconductor processing apparatus is disclosed that may include a reaction chamber joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal direction of the chamber extends from the inlet flange to the outlet flange and a plurality of ribs are provided on an outer surface of at least an upper chamber wall. The semiconductor processing apparatus may also include at least one array of heating elements disposed above the reaction chamber and at least one variable positioning device coupled to the at least one array of heating elements and configured to controllably adjust the position of the at least one array of heating elements relative to the position of the plurality of ribs.

Abstract: A plasma processing apparatus including a processing container and a conductive member, includes a plasma generator configured to generate plasma in the processing container, a power application part configured to apply a DC power to the conductive member in a state in which plasma is generated in the processing container by the plasma generator, a measurement part configured to measure a physical quantity related to the DC power applied by the power application part, and a calculator configured to obtain a wear amount of the conductive member using the measured physical quantity related to the DC power in a correlation function between the wear amount of the conductive member and the physical quantity related to the DC power.

Abstract: An apparatus for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.

Abstract: A wafer processing apparatus includes a chamber, and a voltage waveform generator configured to accelerate plasma ions of the chamber, the voltage waveform generator includes: a pulse circuit configured to apply a chamber voltage, which is a pulse voltage, to the chamber by adjusting a chamber current applied to the chamber; and a slope circuit configured to generate a slope in an on-duty of the chamber voltage, which is the pulse voltage, and the pulse circuit includes a first inductive element configured to store a first internal current.

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

Abstract: Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.

Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Abstract: A rotational drive device includes a first rotator configured to rotate with respect to a stator, a plurality of second rotators configured to rotate with respect to the first rotator, a plurality of drivers configured to rotatably drive the respective second rotators, and a plurality of driver controllers configured to rotate integrally with the first rotator and to control rotation of the drivers, respectively, the respective driver controllers being connected to one another by a communication network.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A substrate liquid processing apparatus includes a processing liquid storage unit configured to store a processing liquid therein; a processing liquid drain unit configured to drain the processing liquid from the processing liquid storage unit; and a control unit. The control unit performs a first control in a constant concentration mode in which a concentration of the processing liquid in the processing liquid storage unit is regulated to a predetermined set concentration and a second control in a concentration changing mode in which the concentration of the processing liquid is changed. In the second control, a set concentration after concentration change is compared with a set concentration before the concentration change, and when the set concentration after the concentration change is lower, the control unit controls the processing liquid drain unit to start draining of the processing liquid.