Patents Examined by L. Pascal
  • Patent number: 10770770
    Abstract: A low loss, wide band, phase shifter utilizing one or more transformers in presented. In one case, the phase shifter includes a reflective SPDT switch that is coupled to a transformer. In another case, the phase shifter includes a distributed SPDT switch that includes switchable conduction paths having series connected unit elements of a same phase shift. The transformer may be part of an existing circuit and may be reused to provide the functionality of the phase shifter by introducing the reflective or the distributed SPDT switch.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: September 8, 2020
    Assignee: pSemi Corporation
    Inventor: Vikas Sharma
  • Patent number: 10771043
    Abstract: A CMOS compatible GHz ultrasonic pulse/echo transmit-receive ultrasonic delay element demonstrating less than <6 ppm stability over time and having a zero-temperature coefficient of delay at two temperatures. The delay element includes one or more CMOS compatible piezoelectric transducers requiring no release step, which transmit and/or receive a GHz-ultrasonic wave packet. The bulk substrate exhibits low loss for the GHz-ultrasonic wave packet transmitted through the substrate and uses the phenomenon of diffraction to retrieve multiple reflections.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: September 8, 2020
    Assignee: CORNELL UNIVERSITY
    Inventors: Amit Lal, Mamdouh Abdelmejeed, Justin Kuo
  • Patent number: 10763824
    Abstract: A ladder filter includes at least one series arm resonator connected in a path between first and second input/output terminals, at least two parallel arm resonators each connected between a connection node in the path and a ground, and an inductor connected in series to the at least one series arm resonator. The inductor is closer to the first input/output terminal than are the at least one series arm resonator and the at least two parallel arm resonators. Of the at least two parallel arm resonators, a first parallel arm resonator connected closest to the second input/output terminal has the highest anti-resonant frequency.
    Type: Grant
    Filed: November 12, 2018
    Date of Patent: September 1, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Toshiaki Takata
  • Patent number: 10763822
    Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes comb-shaped electrodes facing each other, each of the comb-shaped electrodes having grating electrode and a bus bar connected to the grating electrodes, a duty ratio of grating electrodes of the comb-shaped electrodes in a center region of an overlap region differing from a duty ratio of grating electrodes of the comb-shaped electrodes in an edge region of the overlap region in an arrangement direction of the grating electrodes, the grating electrodes of each of the comb-shaped electrodes overlapping with the grating electrodes of the other in the overlap region, a grating electrode of a first one of the comb-shaped electrodes in the center region having a different width from a grating electrode of a second one of the comb-shaped electrodes in the center region.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: September 1, 2020
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Takashi Matsuda, Masafumi Iwaki
  • Patent number: 10756704
    Abstract: The aim according to the invention is to suppress a disturbing SH mode in a ladder-type filter. This aim is achieved in that the resonance frequency of the series resonator responsible therefor is moved and, at the same time, the pole zero distance of the series resonator is reduced by parallel connection with a capacitor. The antiresonance of the series resonator and therefore also the passband thus remain unchanged.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: August 25, 2020
    Assignee: QUALCOMM Incorporated
    Inventors: Wolfgang Sauer, Franz Kubat
  • Patent number: 10756702
    Abstract: An acoustic resonator includes a substrate, and a resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion, wherein the resonant portion is configured to have an asymmetrical polygonal plane, an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, and the insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: August 25, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Tae Yoon Kim, Jong Woon Kim, Moon Chul Lee, Yong Jin Kang, Nam Jung Lee
  • Patent number: 10756696
    Abstract: Acoustic wave filter devices is disclosed. The device includes a piezoelectric layer, an input electrode and an output electrode located on a top surface of the piezoelectric layer and physically separated from one another, and a counter electrode having a top surface connected to a bottom surface of the piezoelectric layer. The input and output electrodes each include a base and at least one extension extending from the base. The at least one extension of the input electrode extending alongside and in a generally opposite direction to and separated by a gap width from an adjacent extension of the at least one extensions of the output electrode. In some embodiments, the at least one extension of the input or output electrodes has a width that can changes from a first end of the at least one extension to a second end.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: August 25, 2020
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Tuomas Pensala, Markku Ylilammi
  • Patent number: 10756705
    Abstract: A switching circuit is provided. The switching circuit includes at least one Surface Acoustic Wave (SAW) filter, a Single-Pole n Throw (SPnT) switch connected to an input port of each of the at least one SAW filter, and a Dual-Pole n Throw (DPnT) switch connected to an output port of each of the at least one SAW filter.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: August 25, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chang-Joon Park
  • Patent number: 10749498
    Abstract: An elastic wave device includes an IDT electrode provided on a piezoelectric substrate and including a first end region including one end of the IDT electrode in an elastic wave propagation direction, a second end region including the other end of the IDT electrode in the elastic wave propagation direction, and an inner region that is located farther toward an inside than the first and second end regions in the elastic wave propagation direction, includes first and second high-acoustic-velocity regions, and a center region and first and second low-acoustic-velocity regions, located in the crossing region. The mass of the IDT electrode in the crossing region in the first and second end regions is smaller than the mass of the IDT electrode in the crossing region in the inner region.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: August 18, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yasumasa Taniguchi
  • Patent number: 10749500
    Abstract: A high-frequency module that performs filtering of signals transmitted and received through an antenna includes an antenna terminal, a transmission terminal, a reception terminal, a reception filter connected between the antenna terminal and the reception terminal, a transmission filter connected between the antenna terminal and the transmission terminal, a first element connected between the antenna terminal and the transmission filter, and a second element connected in series between the transmission terminal and the transmission filter. The first element and the second element are capacitively coupled to each other.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: August 18, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Naoya Matsumoto, Syuichi Onodera, Kouichi Ueno, Shinya Mizoguchi, Masahide Takebe
  • Patent number: 10742192
    Abstract: A tunable notch filter is disclosed with a first acoustic resonator coupled in series with a first inductive element between a filter input node and a filter output node. A first capacitor is coupled in parallel with the first acoustic resonator and the first inductive element. In at least one embodiment, the first capacitor is configured to have variable capacitance that is electronically tunable by way of an electronic controller. A second acoustic resonator is coupled in series with a second inductive element between the filter output node and a signal ground node. A second capacitor is coupled in parallel with the second inductive element. In at least one embodiment, the second capacitor is electronically tunable. The tunable notch filter is configured to provide a highly selective notch filter response between the filter input node and the filter output node with high attenuation.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: August 11, 2020
    Assignee: Qorvo US, Inc.
    Inventor: Nadim Khlat
  • Patent number: 10727811
    Abstract: In an array of single crystal acoustic resonators, the effective coupling coefficient of first and second strained single crystal filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. The coefficients can be tailored by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers or by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Further, a strained piezoelectric layer can be formed overlying a nucleation layer characterized by nucleation growth parameters, which can be configured to modulate a strain condition in the strained piezoelectric layer to adjust piezoelectric properties for improved performance in specific applications.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: July 28, 2020
    Assignee: Akoustis, Inc.
    Inventors: Jeffrey B. Shealy, Shawn R. Gibb
  • Patent number: 10715111
    Abstract: An elastic wave filter device includes first and second reception filters, an input terminal, output terminals, and reference terminals provided on a piezoelectric substrate. The first reception filter includes series resonators and parallel resonators, and the second reception filter includes series resonators and parallel resonators. The reference terminal connected to the parallel resonator connected so as to be closest to the output terminal among the parallel resonators included in the first reception filter, and the reference terminal connected to the parallel resonator connected so as to be closest to the output terminal among the parallel resonators included in the second reception filter, are separated from each other on the piezoelectric substrate.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: July 14, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Motoki Ozasa
  • Patent number: 10707828
    Abstract: A filter includes series units and shunt units. Each series unit includes at least one bulk acoustic wave resonator. Each shunt unit includes at least one bulk acoustic wave resonator and is disposed between one of the series units and a ground. One of the series units or one of the shunt units includes a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, and a third bulk acoustic wave resonator connected in series. The second bulk acoustic wave resonator has a polarity different from a polarity of the first bulk acoustic wave resonator and a polarity of the third bulk acoustic wave resonator.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: July 7, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Chang Hyun Kim
  • Patent number: 10693440
    Abstract: An acoustic wave device includes: a first substrate having a first surface on which an acoustic wave element is located; a second substrate having a second surface on which a functional element is located; a third substrate having a third surface, which faces the first and second surfaces, and a fourth surface being opposite to the third surface, a first metal layer separated from the acoustic wave element and a wiring line in the first substrate and connecting the first and third surfaces; a second metal layer separated from the functional element and a wiring line in the second substrate and connecting the second and third surfaces; a first metal pattern located on the third surface, being in contact with the first and second metal layers, and connecting the first and second metal layers; and a terminal located on the fourth surface and electrically connectable to the first metal pattern.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: June 23, 2020
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Satoru Ohkubo, Kazuyuki Imagawa, Ryo Miyamoto
  • Patent number: 10686255
    Abstract: A sheet-type metamaterial of a film configuration to exhibit a figure of merit (FOM) exceeding 300 in a terahertz wave band. A film-shaped dielectric substrate has a front surface on which a first wire array is formed, and a back surface on which a second wire array is formed. The first wire array includes elongated metallic first cut wires of a predetermined length l aligned in a y-axis direction with a gap g therebetween and in an x-axis direction with space s therebetween. The second wire array includes second metallic cut wires having the same shape as the first cut wires and aligned to overlap the first cut wires. With a thickness d of the dielectric substrate set at about 50 ?m, the length l of the first cut wire and the second cut wire is a length approximate to a value to generate resonance at a design frequency.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 16, 2020
    Assignee: National University Corporation Tokyo University of Agriculture and Technology
    Inventor: Takehito Suzuki
  • Patent number: 10680578
    Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer (IDT) electrode. The IDT electrode is disposed on the piezoelectric substrate and includes an electrode layer including molybdenum as a main component. The duty ratio of the IDT electrode is about 0.3 to about 0.48.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: June 9, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Mari Saji
  • Patent number: 10680579
    Abstract: A transmission filter in a high frequency module includes serial arm resonators electrically connected in series to a serial arm electrically connecting a shared terminal and a transmission terminal, parallel arm resonators each electrically connected in series to each of parallel arms electrically connecting the serial arm and a ground, a first inductor electrically connected between the ground and a connection end electrically connecting at least the two parallel arm resonators of the parallel arm resonators, and a second inductor electrically connected between the ground and one parallel arm resonator different from the at least two parallel arm resonators of the parallel arm resonators. The second inductor is electromagnetic field coupled to at least one of an antenna side matching element, a transmission side matching element, and a portion of the serial arm in the transmission filter. The first and second inductors obstruct electromagnetic field coupling therebetween.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: June 9, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Masanori Kato, Shinya Mizoguchi, Yukiteru Sugaya
  • Patent number: 10673407
    Abstract: A microelectromechanical resonant circulator device is providing, having a substrate, and at least three electrical ports supported on the substrate. At least three electromechanical resonator elements are connected with associated switch elements and an associated port. The switch elements are operative to provide commutation over time of the electromechanical resonator elements.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: June 2, 2020
    Assignees: Northeastern University, Board of Regents, The University of Texas System
    Inventors: Matteo Rinaldi, Cristian Cassella, Andrea Alu, Dimitrios Sounas, Ahmed Kord
  • Patent number: 10666228
    Abstract: A bandpass acoustic wave filter device includes an IDT electrode and a dielectric film disposed on a piezoelectric substrate including a LiNbO3 layer, and an acoustic wave resonator is defined by the IDT electrode. The acoustic wave resonator utilizes the Rayleigh wave, and a response of an SH wave excited by the acoustic wave resonator is outside a pass band of the acoustic wave filter device.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: May 26, 2020
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Masakazu Mimura