Patents Examined by Laura M Schilly
  • Method of gap filling
    Patent number: 6255162
    Abstract: A method of gap filling is provided. A substrate comprising conductive structures thereon is provided. A gap is between the conductive structures. A conformal first dielectric layer is formed on the substrate and is used to protect the conductive structures and the substrate. An implanting process is performed with a high angle to implant impurities into the first dielectric layer. A second dielectric layer is formed on the implanted first dielectric layer to fully fill the gap.
    Type: Grant
    Filed: March 16, 1999
    Date of Patent: July 3, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Yu-Tai Tsai, Huang-Hui Wu, Chien-Chung Huang, Yeong-Chih Lai
  • Radio frequency sputtering apparatus and film formation method using same
    Patent number: 6248220
    Abstract: A radio frequency sputtering apparatus and a film forming method using the same are disclosed. The method includes the steps of floating a shield adjacent to the substrate, applying an RF power to the substrate as well as the target to induce a self-bias voltage to the target and the substrate, and restricting a plasma discharge region in accordance with the ionization of a process gas to an adjacency to the target, thereby decreasing the bombarding of the film on the wafer by positive ions of the plasma and negative ions from the target.
    Type: Grant
    Filed: March 18, 1999
    Date of Patent: June 19, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jeong-Min Seon