Patents Examined by Leo P. Picardi
  • Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technologies
    Patent number: 6054735
    Abstract: A very thin (less than 350 angstrom) layer of silicon dioxide (SiO.sub.2) is produced using plasma-enhanced chemical vapor deposition (PECVD) by substantially increasing the time duration of pre-coat and soak time steps of the PECVD process and substantially reducing the flow of silane (SiH.sub.4), the applied high frequency power and the applied pressure in the PECVD process.
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: April 25, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Minh Van Ngo