Patents Examined by Leonidas J. Jones, III
  • Patent number: 5512383
    Abstract: A method of manufacturing a wavelength converting element forms an optical waveguide having a substantially uniform thickness and a desired size. A thin film of lithium niobate is formed on a substrate of lithium tantalate, and a mask corresponding to an optical waveguide is formed on the thin film. A proton exchange is performed on a predetermined area of the thin film through the mask. A potassium ion exchange is further performed on the proton-exchanged area, thus yielding the optical waveguide. The mode of light that propagates in the optical waveguide can be set to a low-order mode, so that the efficiency of converting the incident light to the second harmonic is improved.
    Type: Grant
    Filed: June 28, 1994
    Date of Patent: April 30, 1996
    Assignee: Pioneer Electronic Corporation
    Inventors: Kiyofumi Chikuma, Atsushi Onoe
  • Patent number: 5510188
    Abstract: A process of coating a glass substrate with a ceramic-like tough film, as well as the composite product of said process is disclosed. The process comprises forming, by conventional coating methods, a film of an aqueous silicate composition on the surface of a glass substrate. The aqueous silicate composition comprises pigment, aqueous silicate solutions, alkali metal hydroxide, colloidal silica and feldspar. The process is especially useful for rendering architectural grade and automobile glass opaque and decorative.
    Type: Grant
    Filed: September 14, 1994
    Date of Patent: April 23, 1996
    Assignee: Industrial Control Development, Inc.
    Inventor: Larry D. Vockler
  • Patent number: 5503930
    Abstract: In a layer structure oxide in crystallite form having a composition of the formula: AMO.sub.2 wherein A is Li or Na and M is Co, Ni, Fe or Cr, at least one additive element Z which is Bi, Pb or B is present in the form of an oxide on the surface of crystallites or between crystallites. Atomic ratio Z/M is from 0.0001 to 0.1. Since the crystallites have an increased size, the layer structure oxide has improved properties and is suitable for use as a positive electrode material of a secondary cell.
    Type: Grant
    Filed: July 12, 1994
    Date of Patent: April 2, 1996
    Assignee: TDK Corporation
    Inventors: Satoshi Maruyama, Makoto Kondo
  • Patent number: 5500279
    Abstract: The laminate of the invention is provided with an etch stop to protect the laminate's adhesive layer. The etch stop also circumvents any etching interference due to degradation products which would arise from breakdown of the adhesive layer. The etch stop is a protective thin film in the form of a metal oxide, metal nitride, metal oxynitride, metal carbide or metal oxycarbide coating deposited on the back side of the metal sheet prior to lamination onto the substrate by means of an organic adhesive. The thin etch stop film is in the form of a blanket coating to assure adhesion to the metal surface and to the adhesive. It may be deposited onto the metal sheet by standard vacuum deposition techniques such as DC and magnetron sputtering, thermal and E-beam evaporation, chemical vapor deposition, and plasma enhanced chemical vapor deposition methods. The thin film thickness is flexible, and can range in thickness from tenths of angstroms to microns.
    Type: Grant
    Filed: August 26, 1994
    Date of Patent: March 19, 1996
    Assignee: Eastman Kodak Company
    Inventors: Lee Walter, Steven J. Adamson
  • Patent number: 5478653
    Abstract: A method of forming a crystallographically oriented silicon layer over a glassy layer of, for example, SiO.sub.2. A templating layer of a layered perovskite, preferably Bi.sub.4 Ti.sub.3 O.sub.12, is deposited on the glassy layer under conditions favoring its crystallographic growth with its long c-axis perpendicular to the film. The silicon is then grown over the templating layer under conditions usually favoring monocrystalline growth. Thereby, it grows crystallographically aligned with the underlaying templating layer.
    Type: Grant
    Filed: April 4, 1994
    Date of Patent: December 26, 1995
    Inventor: Charles S. Guenzer
  • Patent number: 5474851
    Abstract: A thin film of gallium oxidized with oxygen is produced by reactive vapor depositing gallium in a vacuum with oxygen followed by tempering. The refractive index (n) lies in the range of 1.2 to 1.3.
    Type: Grant
    Filed: March 7, 1994
    Date of Patent: December 12, 1995
    Assignee: Carl-Zeiss-Stiftung
    Inventor: Bernhard Ganswein
  • Patent number: 5449547
    Abstract: A hard film 2 is applied to cover an outer circumferential surface of a piston ring 1 by an ion plating process. Either 3 percent to 20 percent by weight of oxygen, or 2 percent to 11 percent by weight of carbon is included in a solid solution state in a crystal structure of CrN in the hard film 2. The Vickers hardness of the hard film 2 is in a range of 1600 to 2200.
    Type: Grant
    Filed: March 8, 1994
    Date of Patent: September 12, 1995
    Assignees: Teikoku Piston Ring Co., Ltd., Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Satomichi Miyazaki, Nobuyuki Yamashita, Shoji Tanaka, Hiroto Fukutome, Hiroshi Tamagaki