Abstract: A method of forming a gate electrode in a semiconductor device which can effectively prevent abnormal oxidation of a metal layer without occurring thermal budget and the deterioration of a gate insulating layer during gate re-oxidation process, is disclosed. In the present invention, one selected from a group consisting of an iridium(Ir) layer, a ruthenium(Ru) layer and an osmium(Os) layer capable of forming a nonvolatile conductive metal oxide layer, is used as a metal layer of a gate electrode instead of a W layer in conventional art. Therefore, although a gate re-oxidation process is performed by a well known method, it is effectively prevented that the metal layer is abnormally oxidized, thereby forming an uniform oxide layer on the side wall of the gate. Furthermore, since the oxide layer is conductive, the resistivity of the gate electrode is reduced.

Abstract: An improved method for photoresist residue is described. The method is used for preventing a material layer from being damaged by the photoresist residue. A semiconductor substrate is provided. An insulating layer is formed over the substrate. The patterned material layer is formed on the insulating layer. A thin dielectric layer is formed on the insulating layer and the material layer to protect the material layer. A patterned photoresist layer is formed on the dielectric layer. The insulating layer is defined. The photoresist layer is removed.

Abstract: Methods of oxidizing the surface of a photoresist material on a semiconductor substrate to alter the photoresist material surface to be substantially hydrophillic. Oxidation of the photoresist material surface substantially reduces or eliminates stiction between a planarizing pad and the photoresist material surface during chemical mechanical planarization. This oxidation of the photoresist material may be achieved by oxygen plasma etching or ashing, by immersing the semiconductor substrate in a bath containing an oxidizing agent, or by the addition of an oxidizing agent to the chemical slurry used during planarization of the resist material.