Abstract: A method for continuously casting thin metal products, the method comprising the operations of pre-heating a pair of refractory plates (7) for the lateral containment of a bath of molten metal constituted of a pair of counter-rotating rolls (1, 2) and of abutting said pair of plates (7) towards each lateral surface of the ends of said pair of rolls (1, 2), characterized in that it comprises the operations of applying a controlled elastic or elastic/plastic deformation to said pair of plates (7) at the contacting arc between the surface of the plates (7) and the peripheral portion of the ends of said rolls (1, 2), and controlling said elastic and/or elastic-plastic deformation of said pair of plates (7) during the whole casting process, so as to minimize the surface wear of the plates (7) and of the ends of the rolls (1, 2), and to guarantee the maintainment of a predetermined distance between said rolls (1, 2) and said plates (7) lower than a predetermined value, and to minimize the occurrence of leaks-of mol

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract: An apparatus for removing a casting comprising an electronic package substrate and an array of cast solder columns having a column pitch of less than 2 mm extending therefrom from the corresponding openings of a mold. The apparatus includes a removable mold containing a plurality of openings for casting a corresponding array of solder columns and bonding the columns to the underside of an electronic package substrate. A stripper plate for receiving the mold contains openings through a thickness thereof corresponding to at least some of the openings in the mold. An ejector assembly including ejector pins having a length at least as long as the sum of the thickness of the stripper plate at the stripper plate openings and the thickness of the mold at the column casting openings, and corresponding to openings in the mold and the stripper plate.

Abstract: A plasma etching apparatus has a central processing chamber, an upper exhaust chamber thereabove, and a lower exhaust chamber therebelow. The processing chamber, the upper exhaust chamber, and the lower exhaust chamber are airtightly formed by a central casing part, an upper casing part, and a lower casing part which are separably combined. The upper and lower exhaust chambers are respectively connected to upper and lower exhaust pumps. A susceptor having a support surface for supporting a target object, and an upper electrode or shower head opposing it are arranged in the processing chamber. A processing gas spouted through the shower head flows upward and downward toward the upper and lower exhaust chambers via the processing chamber.

Abstract: A plasma processing apparatus for stably and uniformly performing various kinds of processing by preventing unnecessary plasma discharge in the processing comprises a susceptor pin for supporting a substance to be processed, the susceptor pin being disposed to pass through a hole formed to a susceptor, projecting from the upper surface of the susceptor when the susceptor falls and falling by its own weight when the susceptor rises so as to be buried in the hole, and a guide for guiding the rising and falling directions of the susceptor pin, wherein the susceptor pin and the guide are composed of ceramics.

Abstract: A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

Abstract: Apparatus responsive to an input image for forming an optical structure such as a lens array on a receiver including a fluid delivery chamber having a fluid capable of forming the optical structure. The apparatus enables the fluid chamber to deliver fluid to the receiver to form the optical structure; fluid channel for delivering fluid to the fluid delivery chamber; and fluid flow regulation for regulating the fluid flow to the fluid delivery chamber and from the delivery chamber to the receiver in response to the values of the input image and for positioning the receiver relative to the delivery chamber so as to form the desired optical structure.

Abstract: A horizontal-type silicon-nitride furnace (HOSINF) having two tubes is provided. The HOSINF includes an outer tube and an inner tube. One end of the outer tube is coupled to a pump. The other end of the outer tube can be well sealed by a door through a flange. The inner tube is located inside the outer tube. The inner tube has a closed end and an opened end, in which the opened end is near to the door, and the closed end is near to the pump. The inner tube includes a first gas inlet and a second gas inlet. Desired reaction gases are flushed into the inner tube from the first inlet and the second inlet. The inner tube surrounds a paddle carrying several wafers, on which a silicon nitride layer is to be formed. The paddle is mounted on the door. A heater is located on a side periphery of the outer tube.

Abstract: A high temperature vapor coating container, including a hollow interior, resists distortion and cracking at a vapor coating temperature of at least about 1700.degree. F. as a result of making the container of a nonmetallic material having a coefficient of thermal expansion of less than about 4.5.times.10.sup.-6 at the vapor coating temperature, the material being nonreactive with the coating vapor at the vapor coating temperature.

Abstract: A tilt mechanism for periodically tilting a cassette configured to hold a plurality of wafers or workpieces such that the wafers or workpieces become gravity-loaded against a rear portion of the cassette. The tilt mechanism is mounted entirely above a worktable of a CMP or other processing machine and comprises a housing which houses a circular cam having a spiral groove formed therein. A tilt arm is pivotally mounted to the housing and extends vertically between a lower end which is adjacent the cam and an upper end which is fixed to a platform supporting a cassette holding a plurality of workpieces. A cam follower is attached to the lower end of the arm and projects into the groove. Rotary motion of the cam effects pivotal movement of the tilt arm which, in turn, effects tilting of the support platform and the cassette.

Abstract: An apparatus for wet processing of substrates in a controlled environment. It is a single-substrate processing apparatus which is capable of carrying out etching, rinsing, and drying processes all in a single apparatus and in a controlled environment. A closed processing chamber is provided for processing a substrate in a closed environment. Processing liquids and gases are introduced into the chamber and the chamber is rotated with the substrate. Temperature inside the chamber is controlled by heating the gases. Humidity is controlled by varying the proportion of water vapor. The rotation of the chamber with the substrate creates a stable environment where processing parameters are more easily controlled.