Patents Examined by Long Phan
  • Selective spacer layer deposition method for forming spacers with different widths
    Patent number: 6943077
    Abstract: A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.
    Type: Grant
    Filed: April 7, 2003
    Date of Patent: September 13, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ai-Sen Liu, Baw-Ching Perng, Ming-Ta Lei, Yih-Shung Lin, Cheng-Chung Lin, Chia-Hui Lin