Abstract: The circuit board plasma etching apparatus includes a preheating chamber, a plasma reaction chamber and a cooling chamber for etching circuit boards with plasma in a quasi continuous operation. The plasma reaction chamber is sealed by a gas-tight preheating sealing slide adjacent the preheating chamber and by a gas-tight cooling sealing slide adjacent the cooling chamber. A preheating door selectively closes the preheating entry end and a cooling door selectively closes the cooling chamber exit end. Boards to be etched are placed in printed circuit board cages supported by a guide rail within the chambers. The guide rail is separable into a preheating segment, a reaction chamber segment and a cooling segment contained within the respective chambers. A preheating chamber bellows allows axial movement of the preheating door, as does a cooling chamber bellows for the cooling chamber door. Axial displacement of the doors allows selective segmentation of the guide rail.

Abstract: Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of a nonionic alkylphenol polyglycidol ether having the formula: ##STR1## wherein R is an alkyl group having from about 4 to about 12 carbon atoms, and x is from about 3 to about 15. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF of from about 3:1 to about 50:1. The novel etching solutions of the present invention have excellent wetting characteristics, will not incorporate metallic ions, and retain their wetting properties after extended periods of continuous filtration.

Abstract: Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of a nonionic alkyl polysaccharide having the formula:RO(R'O).sub.x Z.sub.ywherein R is alkyl, alkylphenol, hydroxyalkyl, hydroxy alkylphenol, or mixtures thereof and said alkyl groups contain from about 6 to about 18 carbon atoms, R' contains from 1 to about 4 carbon atoms, x is from 0 to about 5, Z is a moiety derived from a reducing saccharide containing from 5 to 6 carbon atoms, and y is from about 1 to about 5. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF of from about 3:1 to about 50:1.The novel etching solutions of the present invention have excellent wetting characteristics, will not incorporate metallic ions, and retain their wetting properties after extended periods of continuous filtration.

Abstract: A series of water-dispersible and oil-dispersible corrosion inhibiting solutions are disclosed which contain a polythioether represented by the formula ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are H, a methyl group, or an ethyl group, X is a divalent organic radical selected from the group consisting of --C.sub.2 H.sub.4 --, --C.sub.4 H.sub.8 --, --C.sub.2 C.sub.4 OC.sub.2 H.sub.4 --, and C.sub.2 H.sub.4 SC.sub.2 H.sub.4 --, n is about 2 to about 40, and p is 0 or 1. The corrosion inhibitor solvent is preferably a hydrocarbon, such as an aromatic solvent or an alcohol, but may be water. Metal equipment can be protected through the use of the invention corrosion inhibiting solutions by contacting metal with an effective amount of inhibiting solution containing the polythioethers in a continuous exposure or batch treatment.

Abstract: A process for the fabrication of a vertically differentiated semiconductor structure is disclosed. In this process the semiconductor structure is covered with a vertical erosion control mask. The control mask covering at least one horizontal surface of the semiconductor structure is removed leaving the vertical surface covering intact. An isotropic etching of the uncovered horizontal surface next occurs. Finally, the control mask covering of the vertical surface of the semiconductor structure is removed. This process permits etching treatment of horizontal surface defects without adverse effect on the vertical surface of the semiconductor structure.

Abstract: A card-type thin electronic device in which the upper and lower panels are bonded to flanges projecting from a side-wall forming frame between the two panels, while a number of grooves are formed by a half-etching process on the surfaces of both panels bonded against the side-wall forming frame.

Abstract: The invention concerns a method and an equipment for the simulated distillation, by means of gas chromatography, of petroleum products, capable of characterizing also high boiling products, exceeding C55, over 600 C TBP. A chromatograph is used with a capillary column having a length less than or equal to 10 m, containing an immobilized non polar polydimethylsilicon gum stationary phase with a film thickness less than or equal to 0.2 .mu.m. The sample is introduced through a non vaporizing direct cold on-column injection and the eluted sample is detected by means of a FID detector. The column oven is operated in temperature programming conditions up to temperatures exceeding 400 (up to 430-450 C.).

Abstract: A method of manufacturing a semiconductor device having at least one narrow and comparatively deep groove (3) in the semiconductor surface, while zones (9) are implanted in the walls and/or the bottom of the groove over only part of the groove length. According to the invention, the implantation mask is provided on a filler material (6), which fills the groove and is removed after the masking layer (7) has been provided. The filler material preferably consists of a photo-resist.

Abstract: There is disclosed a method of providing an elongated stock; producing a wafer comprising the steps of processing one end face of an elongated stock to form a first flat surface; cutting through one end portion of the stock transversely by a cutter to provide a slice of a predetermined thickness having opposite side faces defined respectively by the first flat surface and a cut surface subjected to the cutting; and processing the cut surface of the slice to form a second flat surface, using the first flat surface as a reference surface, thereby providing the wafer.

Abstract: An apparatus for the production of ammonia synthesis gas comprises a hydrocarbon convertor for converting a hydrocarbon feed to an effluent containing hydrogen and carbon monoxide by reaction with air which hydrocarbon convertor includes means to provide air in excess of the stoichiometric amount of nitrogen required for ammonia synthesis. The effluent from the hydrocarbon convertor is in communication with a water gas shift convertor for converting the carbon monoxide in the effluent to carbon dioxide. The water gas shift convertor is in communication with a pressure-swing adsorption system capable of selectively adsorbing carbon dioxide, carbon monoxide, methane and other impurities from hydrogen and a portion of the nitrogen fed in the gas mixture to the pressure swing adsorption system. The pressure swing adsorption system is provided with a conduit for discharging a partially purified ammonia synthesis gas mixture of hydrogen and nitrogen and a conduit for discharging purge gas.

Abstract: An apparatus is disclosed in which a first gas is contacted with a solid at an elevated reaction temperature to produce a gaseous product, the solid being deactivated during said contact and exothermically reactivated by a second gas and again contacted with the first gas, the improvement includes the steps of:(a) providing a quantity of the solids in relatively equal amounts to at least these fixed bed reactors;(b) sequentially operating each fixed bed reactor according to the cycle comprising: (1) preheating introducing the first gas into a first end of the reactor and withdrawing gaseous product from a second end of the reactor; (2) preheating the first gas to reaction temperature by introducing the first gas into the fixed bed of solids at a plurality of points along the length of the reactor and withdrawing the preheated gas from the second end of the reactor; and (3) reactivating the deactivated solids by introducing the second gas into the fixed bed of solids at a plurality of points along the length o

Abstract: A sterilization container is provided with relatively large top and bottom apertures to allow hot steam to rapidly pervade the interior of the container through the top while flushing cool air out the bottom. The apertures are provided with pressure actuated valves with large cross sections to minimize impedance to gas flow when the valves are open. The pressure-sensitive elements of the valves are set such that the valves close to seal the apertures when the external pressure is at atmospheric, and rapidly open fully when the pressure begins to rise in the autoclave as steam is admitted at the start of a sterilization cycle. When the external pressure is returned to atmospheric at the end of the cycle, the pressure-actuated valves close to provide a sealed container for removal from the autoclave.

Abstract: A metal etching process involving an oxidation-reduction reaction where the metal being etched is oxidized and the active ingredient in the etchant solution is reduced, incorporates contacting said metal with an etching solution containing an active ingredient selected from the group consisting of ferric ions, ferricyanide ions, ceric ions, chromate ions, dichromate ions, and iodine, and introducing ozone into said etching solution to rejuvenate and agitate the solution.

Abstract: A method is described for treating consumable products, such as foods, drugs or dietary supplements, for example drugs enclosed in capsules, to detect contamination. A colorimetric indicator, which can react with a contaminating substance such as cyanide, is incorporated into the consumable product or the packaging for the product. When the indicator comes in contact with the contaminating substance, a readily detectable color signal is produced.

Abstract: In an installation for etching material to be etched consisting at least partly of metal, preferably copper, oxidizing agent is added to the etching medium containing an acid, directly before the actual etching operation, in a quantity which is in a ratio to the quantity required according to stoichiometric calculation for etching the quantity of metal to be removed respectively from the material to be etched. For this a device is provided which emits a first electrical signal. This gives information about the quantity of material to be removed from the material to be etched respectively being processed. A second signal is emitted by a detector when the material to be etched enters the actual etching machine. Both signals are processed by a central control unit. This takes place in such a way that the central control unit emits a third signal which it has ascertained according to a memorized program from the first signal and whenever the detector signal is received.

Abstract: A method of making a multiplicity of microwave integrated circuits is disclosed wherein a thin glass substrate is etched to contain both via holes and large area holes which receive discrete active devices therein. An electrically and thermally conductive carrier is adhered to one surface of the glass substrate with the electrical interconnections and circuit components formed on the opposing surface of the glass substrate. The method enables a multiplicity of microwave circuits to be made and tested by batch processing techniques prior to division into individual circuits.

Abstract: A method for the construction of self aligned submicron trenches by forming projecting ridges on a surface, forming a mask over the surface and then etching back the ridges to form gaps in the mask which act as guides for the etching of trenches in the substrate below.

Abstract: An apparatus for use in the measurement of total iron binding capacity of blood serum or plasma comprises a container having a removable closure and containing a measured quantity of dried iron-saturating substance, which is adhered to the inner surface of the container or of the closure and a measured quantity of dried alumina. The invention further provides a simple, rapid and inexpensive method for measurement of total iron binding capacity using the apparatus.

Abstract: A method for forming electrically conductive circuits on a base board is described, the method comprising the steps of: forming a first electrically conductive circuit layer on one side of a base board, the first circuit layer being receptive to a metal plating; coating a plating-resistant resist on the same side of the base board excluding certain portions of the first circuit layer which are required to be electrically connected to another circuit layer to be subsequently formed on the first circuit layer; coating an electrically conductive copper paste being receptive to a metal plating on the same side of the base board in a manner as to electrically connect said portions of the first circuit layer, with the exception of certain regions of said portions of the first circuit layer which are to be subsequently processed with a metal plating; heating the base board to harden the same; cleansing the base board; and immersing the base board in a metal plating solution to form a metal plating on the electricall

Abstract: A cuvette for liquid samples, particularly for absorption spectrum analysis. The curvette has a multi-part housing structure enclosing a thin sample chamber which is delimited by two radiation transmitting discs and is provided with two bores leading to the sample chamber. Stoppers of a plastic material are inserted into the respective bores, each stopper being provided with a thin longitudinal channel which can be sealed by means of a hollow needle whose tip is inserted into it or by means of a closing needle.