Abstract: A process for forming a crystalline deposited film on a substrate in a film forming space comprising (a) preparing the surface of the substrate by selectively irradiating the surface with an energy beam of an electromagnetic wave or an electron beam through an atmosphere of a gas to provide regions on which crystal nuclei are selectively formed, (b) forming the crystalline deposited film on the substrate surface by separately introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation, the activated species (B) being chemically mutually reactive with the activated species (A), the two activated species forming a mixture to effect a chemical reaction therebetween and thereby effecting the formation of the crystalline deposited film, and (c) exposing the crystalline deposited film surface to a gaseous substance (E) capable of effecting an etching action thereon and thereby ef

Abstract: A portable apparatus for measuring the electrochemical characteristics of a sample is disclosed. A disposable cartridge, including a plurality of interconnected flow chambers, houses a printed circuit board substrate upon which reference and indicating electrodes are formed. The electrodes are employed in the presence of chemical reagents to aid in the electrochemical determination of a sample undergoing analysis. A thermal sensing element is in close proximity to the electrodes to permit the correction of the measurement for variations in temperature. After a pH value has been determined, the used cartridge can be mechanically ejected thus eliminating user exposure to the blood sample being measured. In this way, the pH of a blood sample can be determined quickly, effectively, inexpensively and with a minimum amount of sample and reagent preparation.

Abstract: A reactive ion etching apparatus includes first and second reactive chambers in a single buffer room. First and second stages are placed in front of corresponding reactive chambers. The centers of the reactive chambers and stages form a square. A first transfer arm transfers a wafer between the first reactive chamber and the first stage, a second transfer arm transfers the wafer among the first and second reactive chambers and the first and second stages, and a third transfer arm transfers the wafer between the second reactive chamber and the second stage. The second transfer arm is pivotably mounted at the center of the square and may turn a full 360.degree..

Abstract: In a process for etching complicatedly structured recesses in a silicon substrate, in which acid mixtures containing HF and HNO.sub.3 are used, the problems occurring with a photoresist mask are avoided, on the one hand, by using an SiO.sub.2 mask layer and on the other hand, by fabricating the mask layer beforehand with a thickness profile corresponding to the depth profile to be etched, thereby completely separating the masking and etching steps from each other.