Patents Examined by Lynette J. Umez-Erenini
  • Removal of post etch residuals on wafer surface
    Patent number: 6566269
    Abstract: The present invention provides a method of plasma chamber etching of a semiconductor structure having a base layer, an etch stop layer, a dielectric material layer and a patterned photoresist layer. Among other things, the method may include etching selected portions of the dielectric material layer through the photoresist layer using a plasma etchant containing at least one of fluorine and sulfur in a compound such that portions of the photoresist layer may be contaminated with ions of the at least one of the fluorine and sulfur.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: May 20, 2003
    Assignee: Lucent Technologies Inc.
    Inventors: Peter J. Biles, Mario V. Pita, Sylvia M. Luque, Lauri M. Nelson, Robert H. Mills