Abstract: In order to prevent crystal seeds with retrograde solubility from dissolving in the hydrothermal growing solution at the beginning of the growing process, and to protect the finished crystal at the end of the growing process, and in order to reach the thermodynamic growth equilibrium as soon as possible, the proposal is put forward that the growing solution be prepared, pre-saturated and pre-heated to a temperature close to saturation temperature outside of the growing tank, and that, for the growing process proper, the hot growing solution be added to the pre-heated growing tank provided with crystal seeds, where it should be further heated to a temperature at which the crystals start growing, and, further, that the hot growing solution be quickly removed from the growing tank as soon as the growing process has been completed.

Abstract: The invention relates to a method of growing a single crystal CaF.sub.2 film on a single crystal Si substrate having a principal plane of (100). According to the invention, the substrate temperature is first set at 550.degree.-600.degree. C. to grow a first CaF.sub.2 film (first stage) and the substrate temperature is then raised to 750.degree. C. or higher to grow a second CaF.sub.2 film on the first CaF.sub.2 film (second stage), thus the growth of the CaF.sub.2 films is performed separately in two stages. Since, in the second stage, the growth of CaF.sub.2 film is possible even at higher substrate temperature, the method of growing according to the invention makes it possible to grow a single crystal CaF.sub.2 film with flat surface morphology and excellent crystal quality.

Abstract: In a vertical gradient freeze (VGF) process for growing a large crystal of a Group III-V compound semiconductor in a pyrolytic boron nitride crucible (11), a major part of the inner surface of the crucible is first oxidized to form a boric oxide layer (12).

Abstract: This invention delineates a multiple barrier design for separating the feed compartment (12) from the growth compartment (13) in crucibles (10) used for silicon dendritic web growth. The use of the barrier design greatly reduces the thermal interaction between the two compartments permitting larger replenishment rates without adverse effect on crystal growth. Its novelty lies in having a primary and secondary barrier (15,16) spaced apart from one another such that there exists a space (22) between the barriers (15,16) which is devoid of liquid silicon thus reducing the thermal conductance of the combination.

Abstract: A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.

Abstract: Method of manufacturing orientated substrate plates from solid semiconductor blocks of the III-V group.The invention relates to a method of manufacturing to obtain substrate plates prepared to receive integrated semi-conductor circuits of materials of the III-V group obtained by pulling according to Czochralski. These materials having anisotropic properties, upon which the performances of the semiconductor devices depend, it is of major importance to differentiate the crystallographic axes of teach plate with an accuracy higher than half the degree. According to the invention, this differentiation is effected in two steps. The first step consists in the differentiation of the axes from the formation of pulling nucleus. For this purpose, the pulling nucleus is a rectangular parallelepipedon, one edge of which has a facet serving as a recess for fixing the seed crystal the pulling operation.

Abstract: A process for growing a gallium arsenide single crystal from a polycrystalline gallium arsenide by the horizontal Bridgman technique includes (a) melting the polycrystalline gallium arsenide in a quartz boat which is placed in a quartz tube, at a temperature greater than 1238 deg C. but lower than the melting point of quartz, (b) decreasing the temperature of the melt of gallium arsenide from the seed/melt interface by moving a furnace to crystallize the melt, and (c) annealing the crystallized gallium arsenide during the crystal growth process at a temperature of 1100-1220 deg C.; wherein the above steps are carried out in the absence of an As vapor pressure controlling zone which is kept at a temperature of about 617 deg C. Due to the anealing step, the thermal stress is small and the dislocation hardly occurs. A short quartz tube can be employed due to the absence of the As zone.

Abstract: An apparatus (10) is constructed having a cylindrical enclosure (16) within which a disc-shaped wicking element (18) is positioned. A well or recess (22) is cut into an upper side (24) of this wicking element, and a glass cover plate or slip (28) having a protein drop disposed thereon is sealably positioned on the wicking element (18), with drop (12) being positioned over well or recess (22). A flow of control fluid is generated by a programmable gradient former (16), with this control fluid having a vapor pressure that is selectively variable. This flow of control fluid is coupled to the wicking element (18) where control fluid vapor diffusing from walls (26) of the recess (22) is exposed to the drop (12), forming a vapor pressure gradient between the drop (12) and the control fluid vapor.