Abstract: A process for the manufacture of a glass capable of transmitting and reflecting radiant energy in an amount different from that transmitted and reflected by the original glass is disclosed. An ion implantation of appropriate materials into one or more layers of the glass produces a variation of density in the molecular structure of the layer and consequently a variation of the refractive index. The so obtained glass can be commercially used with no restrictions as to applications where there is contact with the external environment.

Abstract: There is disclosed a method of laser-marking plastic articles without unduly damaging the plastic. The method comprises coating the plastic with a contrasting color layer, and intermediate the color layer and the plastic, a protective layer of a dried coverage of at least 1.5 g/m.sup.2.Optionally, the ablation can be carried out beyond the stripe portion to be marked, to clear away any debris from the white support that otherwise can be left behind by the ablation.

Abstract: A photoluminescent material used for detection of infrared light is prepared using a base material, first and second dopants, a carbonate of the base material, and a fusible salt. The base material is an alkaline earth metal sulfide such as strontium sulfide. Strontium carbonate is used to decrease phosphorescence after charging, whereas lithium fluoride is used to allow the material to be fused together. Samarium oxide and europium oxide are used as the first and second dopants for establishing a communication band for luminescence and a trapping level, respectively. The photoluminescent material is made according to a process involving drying the material, heating the material in a graphite crucible to a fusing temperature in a dry inert atmosphere, grinding the material after cooling, and reheating the material to below the fusing temperature, but sufficiently high to repair the crystal surfaces. The material is then placed in a transparent binder and applied to a substrate.

Abstract: A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.

Abstract: Layers of electrically conductive material are deposited in a standing microwave field. The deposition is done on an electrically conductive substrate in which a part of the surface forms a part of the inner wall of a microwave cavity resonator. As a result of this the microwave energy is used optimally. Measures are taken to keep the coupling place of the microwave ("window") free from an electrically conductive growth. The substrate is preferably moved periodically or aperiodically relative to the plasma and the remaining walls of the resonator.

Abstract: An electroless plating method which comprises applying to a substrate a polymer composition comprising 100 parts by weight of a polymer and an organic metal complex in an amount of from 0.001 to 50 parts by weight as metal, pyrolytically decomposing the organic metal complex at a temperature of from 50.degree. to 500.degree. C. to form plating catalyst metal nuclei on the substrate, removing the dried polymer coating, and conducting electroless plating of the substrate.

Abstract: A surface treatment method, wherein gas particles are applied to a solid surface of a substrate to treat the same surface, comprising the step of applying to the gas particles the narrow line width laser light capable of exciting or decomposing only such gas particles that have velocities in a predetermined range.

Abstract: A process for preparing a photoelectric conversion film containing one or more compound semiconductor made from Cd and group Vi element comprises coating a paste containing (a) a photoelectric conversion material, (b) a dopant, (c) a flux, (d) an organic binder, and optionally (e) a glass frit on a substrate, and sintering it at 300.degree. C.-800.degree. C. in an inert gas blanket.

Abstract: A process for fabricating an electronic device on a non-conductive polymer substrate, particularly from the family of polyaniline, comprises applying a covalent doping agent, such as an R.sup.+ donor compound, where R is an organic group, e.g., methyl iodide, to a preselected portion of a base-type non-conductive polymer substrate containing carbon-nitrogen linkages, and converting such preselected portion of the polymer substrate to an electrically conductive polymer portion, by covalent linkage of the R groups of such donor compound, to nitrogen atoms of the non-conductive polymer substrate. Electronic devices, such as resistors, capacitors, inductors, printed circuits and the like, can be provided by the invention process, in the form of light-weight polymers containing no metal, and which are stable and wherein the conductive portions are non-diffusing.

Abstract: A process for coating a workpiece with a ceramic material comprising the steps of axially advancing a cylindrical ceramic rod of a ceramic material relative to a workpiece while rotating it about its axis in a vacuum, to feed the ceramic rod into an energy beam for evaporation. The rate of feeding of the ceramic rod depends on the rate of deposition of the evaporated ceramic material on the workpiece.

Abstract: The invention relates to a process for the low pressure chemical vapor deposition (LPCVD) of metal silicide, especially molybdenum silicide, on a substrate at a low temperature. The walls of a LPCVD reactor which contains a heated pedestal for holding a substrate are cooled and the pedestal is heated so the substrate temperature reaches a desired level, depending on the metal silicide to be deposited. A metal halide and a silane or disilane are fed separately into the deposition chamber and mixed behind a small baffle plate at the entrance. The metal silicide is deposited on the substrate surface. It is preferred that the substrate be pre-treated with H.sub.2 plasma before deposition.

Abstract: An adhesive for electroless plating is composed of at least one kind of fine powders selected from either a cured heat resistant resin or an inorganic material and easily soluble in a predetermined solution and a heat resistant resin solution sparingly soluble in the predetermined solution by curing treatment. The adhesive for electroless plating in which the above fine powders are dispersed in the above uncured heat resistant resin solution, is coated on a circuit board, dried and cured to form an adhesive layer. When the above predetermined solution contacts with the surface of the adhesive layer, its surface is roughed to be formed a plating film having an excellent adhesiveness by electroless plating.

Abstract: An aqueous ink recording sheet is described which is prepared by coating on the surface of a substrate sheet a resin composition containing as the chief ingredient a mixture comprising (A) 10 to 90 wt % of photo polymerizable, double bonded anionic synthetic resin, and (B) 90 to 0 wt % of partially or completely saponified polyvinyl alcohol, or partially or completely saponified polymer resin composed of 20 to 100 wt % of vinyl acetate and 80 to 0 wt % of other polymerizable monomer or derivatives thereof, and/or (C) 90 to 0 wt % of homopolymer resin of N-vinylpyrrolidone or copolymer resin of other polymerizable monomer therewith, with the weight ratio of (A)/[(B)+(C)] being 90/10 to 10/90, drying the coated resin composition, and then curing the resin composition by the irradiation with actinic rays so as to form a resin coating layer on the substrate.

Abstract: A gas mixture containing phosphine and R.sub.1 R.sub.2 R.sub.3 In X R.sub.4 R.sub.5 R.sub.6 or R.sub.1 R.sub.2 In X R.sub.4 R.sub.5 where the Rs are alkyl groups is passed over a semiconductor substrate comprising indium and phosphorus so as to deposit a semiconductor material comprising indium and phosphorus, and the exposure of the substrate to phosphine is controlled to avoid or reduce transport of the substrate material.Thus, for example, indium phosphide may be grown onto corrugations in gallium indium arsenide phosphide, the corrugations being non-deformed during this growth. Such a growth step may be used in the production of distributed feedback semiconductor lasers operating near 1.55 .mu.m.