Abstract: A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications: field-effect transistors with low gate control voltage. FIG. 3.

Abstract: In a dc SQUID element having two quasi-planar-type Josephson junction portions, as obtained by laminating a plurality of superconducting thin films on a substrate, a SQUID ring and a counter electrode on either of which quasi-planar-type Josephson junction portions are to be formed, are respectively formed at the lowermost layer and the uppermost layer, or at the uppermost layer and the lowermost layer, so that the value of critical current can be adjusted. The arrangement above-mentioned assures good flatness and film quality of a barrier layer interposed between the lower and upper electrodes of the quasi-planar-type Josephson junction portions.

Abstract: An improved zener diode formed in a semiconductor wafer having a primary surface, the zener diode having a PN junction buried beneath the surface. The diode includes a pair of spaced contacts on the surface, the first located on one region and the second located on another laterally spaced region of the surface, to establish a current path through the diode. A replica device is formed on the same wafer generally replicating the physical dimensions of the zener diode. The replica device has a pair of spaced surface contacts located on spaced regions of the surface with a replica current path between them having substantially the same resistance as the on-resistance of the current path of the diode, the replica current path replicating the current path except that it has no PN junction.