Abstract: An apparatus for washing skin uses a brushless electric motor and a spring. The apparatus may include a case; an operation unit installed outside the case; a power supply unit installed at one end inside the case; the brushless electric motor installed inside the case; a control unit to output an electric signal; a face-washing brush fitted with a shaft of the brushless electric motor to be rotated forward and reverse as the brushless electric motor is operated; a holder and a spring.

Abstract: The present invention relates to a device for decontaminating surfaces such as a wall, a floor, or a ceiling of a building, or the like, having one or more toxic products, such as, asbestos, lead (Pb), PCBs (polychlorinated biphenyls), polycyclic aromatic hydrocarbons (PAHs), or radioactive products. The device includes at least one hydroblasting head fed by a high pressure unit and connected to a vacuum source comprising a low pressure source connected to a cyclone head mounted on a container which collects water containing toxic products and residues of the support. A filtration system having a filtering press is provided. The filtering press is fed with water containing toxic products collected in the container and whose output feeds a buffer tank wherein the water from the filtration comprises particles less than or equal to 5 ?m. Another objective of the invention concerns a method for decontaminating surfaces.

Abstract: Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.

Abstract: A BOP cleaning tool includes a first pipe section with a through central channel and radial channels to external fins, with nozzles for flushing fluid from the central channel out into a BOP bore for washing cavities in the BOP bore, the central channel provided with a flow control sleeve provided with holes, the flow control sleeve displaceable from a radially closed initial first closed position to a second position with the holes aligned with the inner radial channels for starting flushing through the nozzles, and further displaceable to a radially closed third position with the holes out of alignment with the inner radial channels for halting the flushing through the nozzles.

Abstract: A system for washing mechanical parts polluted with hydrocarbons is described, which includes a) a cleaning fluid; b) an enzymatic complex that catalyzes the oxidative degradation of hydrocarbons coating the mechanical parts, wherein said enzymatic complex is located within a filter cartridge; and, c) a washing sink. By using the described system, daily degradation efficiency from 250 to 500 g of transformed hydrocarbons in CO2 and H2O is achieved. Moreover, a method to perform washing of mechanical parts is described.

Abstract: A cleaning solution is used, in a transparent antireflective structure that has, on one surface thereof, a plurality of convexities formed at a period equal to or shorter than wavelength in a visible light range, and that prevents, at the one surface, reflection of light entering the one surface, to clean a concavity defining a region between adjacent two of the plural convexities, the cleaning solution having a pH of 10.00 or more.

Abstract: The invention relates to a method for cleaning carbon nanotubes comprising the following steps: provision of a carbon nanotube substrate, first washing of the carbon nanotube substrate by means of an acid and second washing of the carbon nanotube substrate by means of a solution, wherein the solution has replacement anions of at least one of the acid radical anions of the acid of different type, and the substance amount fraction of the replacement anions in the solution is greater than the substance amount fraction of the anions in the solution corresponding to the acid radical anions of the acid. The invention further relates to a carbon nanotube substrate which can be obtained by such a method.

Abstract: Provided herein is a composition that includes: (i) chelator (e.g., ethylenediaminetetraacetic acid (EDTA)), (ii) buffer system (e.g., potassium phosphate dibasic and sodium hydroxide), (iii) cleaner (e.g., diethyl glycol monoethyl ether), (iv) solubilizer (e.g., propylene glycol), and (v) diluent (e.g., water), wherein the composition has a pH of at least about 9.5. Also provided is a method of cleaning a medical device that includes contacting the medical device with the composition described herein, for a period of time effective to clean the medical device. Subsequent to the cleaning, the medical device can optionally be disinfected, dried, and stored.

Abstract: Methods for cleaning a wafer in semiconductor fabrication are provided. The method includes providing a wafer. The method further includes cleaning the wafer in a first cleaning cycle by supplying a cleaning solution and supplying a first washing liquid mixed with a purge gas in sequence. The method also includes cleaning the wafer in a second cleaning cycle by supplying the cleaning solution and a second washing liquid mixed with the purge gas in sequence. The second cleaning cycle is initiated after the first cleaning cycle is finished.

Abstract: A scrubber is formed with a plurality of bristles and can be inserted into a bottle or similar vessel for cleaning. Several such scrubbers can be inserted into a single bottle such that the bottle can be shaken to allow the scrubber balls to reach all of the surfaces on the interior of the bottle.

Abstract: The plasma reactor comprises a reaction chamber (23) connectable to a source of ionizable gases (25) and to a heating device (80), said reactor (10) being subjected to the phases of heating (A), cleaning (L) and/or surface treatment (S), cooling (R), unloading (D) and loading (C) of metallic pieces (1). The installation comprises: at least two reactors (10), each being selectively and alternately connected to: the same source of ionizable gases (25); the same vacuum source (60); the same electrical energy source (50); and to the same heating device (80), the latter being displaceable between operative positions, in each of which surrounding laterally and superiorly a respective reactor (10), while the latter is in its heating phase (A) and cleaning phase (L) and/or in the surface treatment phase (S) of the metallic pieces (1).

Abstract: A method for gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors is disclosed in various embodiments. According to one embodiment of the invention, a method is provided for processing a semiconductor substrate. The method includes providing a substrate containing a germanium-containing semiconductor or a compound semiconductor, and exposing the substrate to a process gas containing a sulfur-containing gas and a nitrogen-containing gas that passivates a surface of the germanium-containing semiconductor or the compound semiconductor with sulfur. According to another embodiment, the germanium-containing semiconductor or the compound semiconductor has an oxidized layer thereon and the exposing to the process gas removes the oxidized layer from the substrate. According to another embodiment, the substrate may be treated with hydrogen fluoride (HF) gas and ammonia (NH.sub.

Abstract: A method for processing a substrate with a porous film having a porous structure formed on a surface layer thereof includes the following a) and b) steps. The a) step is a step of mixing a first processing solution containing water with gas to generate droplets of the first processing solution and injecting the droplets of the first processing solution to the porous film. In addition, the b) step is a step of, after the a) step, mixing a second processing solution which is an organic solvent having higher volatility than the first processing solution with the gas to generate droplets of the second processing solution and injecting the droplets of the second processing solution to the porous film.

Abstract: A clean-in-place launching station with cleaning chamber (2) for cleaning a pipeline pig (16) is disclosed. The cleaning chamber (2) is equipped and configured to enable the pig to be completely surrounded by turbulently flowing cleaning fluid during the cleaning process. A plunger (3) capable of axially moving the pig (16) is completely encased within the cleaning chamber. The plunger (3) has at least one internal fluid channel (10) which connects the space in front of the front end (6) of the plunger facing the pig (16) with the space behind the back end (8) of the plunger.

Abstract: Example systems and methods for treating workpieces are disclosed. In some examples, the system includes a treatment station positioned in a process chamber for treating the workpiece with fluid. The example system includes a handling device positioned in the process chamber. The example handling device includes a base positioned in the process chamber, a supporting arm coupled to the base and pivotable relative to the base about a first pivot axis, a pivoting arm coupled to the supporting arm and pivotable relative to the supporting arm about a second pivot axis, and a receptacle coupled to the pivoting arm and including a workpiece holder capable of picking up the workpiece from a workpiece feeder positioned outside of the process chamber. The example handling device is capable of moving the workpiece through an opening of the process chamber and into a treatment position at the treatment station.

Abstract: A mask cleaning apparatus and a mask cleaning method are provided. The mask cleaning method comprises: placing a mask (100) on a stage (20); and ejecting a dry ice particle group including a plurality of dry ice particles (101) toward a surface of the mask (100) at a speed of 340 m/s to 1000 m/s, within a cleaning time, wherein the plurality of dry ice particles (101) impact the surface of the mask (100) so as to remove a contaminant on the surface of the mask. Thereby, the mask cleaning apparatus and the mask cleaning method provided by embodiments of the present disclosure can remove the contaminant on the mask, without increasing a contamination medium and damaging the surface of the mask.

Abstract: An air-flushing device cleans a cleaning object by air-blowing to the object from a nozzle. The air-flushing device outputs a pressure value changing according to electromagnetic valve's opening/closing, and controls the valve's opening/closing based on two reference values of an upper-limit setting value and a lower-limit setting value lower than that. The air-flushing device closes the valve if the pressure value changes from lower than the upper-limit setting value to that or higher, and opens the valve if the pressure value changes from higher than the lower-limit setting value to that or lower.

Abstract: A method for digestion and gasification of graphite for removal from an underlying surface is described. The method can be utilized to remove graphite remnants of a formation process from the formed metal piece in a cleaning process. The method can be particularly beneficial in cleaning castings formed with graphite molding materials. The method can utilize vaporous nitric acid (HNO3) or vaporous HNO3 with air/oxygen to digest the graphite at conditions that can avoid damage to the underlying surface.

Abstract: Disclosed is a substrate processing apparatus (a substrate processing method, and a computer readable storage medium having a substrate processing program stored therein) of cleaning an etched substrate with a polymer removing liquid, in which any of isopropyl alcohol vapor, water vapor, deionized water and isopropyl alcohol, ammonia water, and ammonia water and isopropyl alcohol is supplied to the substrate before the substrate is cleaned with the polymer removing liquid.

Abstract: Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity.