Abstract: An organic light emitting device can include a first electrode and a second electrode, and a red emission layer, a green emission layer and a blue emission layer which are positioned between the first electrode and the second electrode. Each of the red emission layer, the green emission layer and the blue emission layer can be disposed in an entirety of a red sub-pixel area, a green sub-pixel area and a blue sub-pixel area. A distance between the first electrode and the second electrode in at least one of the red sub-pixel area, the green sub-pixel area and the blue sub-pixel area can be a first-order optical distance equal to ?/2n, where ? is a wavelength of light emitted from each of the sub-pixel areas, and n is an average refractive index of a plurality of organic material layers disposed between the first electrode and the second electrode.

Abstract: A frequency converter for converting a single mode input beam at a fundamental frequency to an output beam at a converted frequency is configured with a plurality of spaced optical components defining a resonant cavity. The optical components shape the input beam with at least one beam waist in the cavity. The frequency converter further includes a non-linear crystal located within the cavity in either a divergent beam with a Rayleigh range smaller than a cavity round trip length so that a center of the crystal is spaced from the beam waist along a beam path, or in a collimated beam with a Rayleigh range greater than the cavity round trip length.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: A laser oscillator which can effectively remove scattered light by a simpler configuration. The laser oscillator comprises an output mirror and a rear mirror which are arranged facing each other and a discharge tube which is arranged between the output mirror and the rear mirror. The discharge tube has a first part which gets larger in inner diameter from a first end part in an axial direction facing the output mirror toward the rear mirror.

Abstract: A manufacturing method for a vertical cavity surface emitting laser includes steps of forming, on a substrate, a multilayer body including first and second Distributed Bragg Reflector layers, an active layer, and a to-be-oxidized layer becoming a current constriction structure, processing the multilayer body such that a lateral surface of at least the to-be-oxidized layer is exposed, and forming a current constriction structure by oxidizing the to-be-oxidized layer from the lateral surface thereof after the multilayer body has been processed. The step of forming the current constriction structure includes steps of holding the substrate to be positioned along a uniformly-heated plate that is placed on a heat conduction member, and to be spaced from the uniformly-heated plate, and heating the substrate by radiant heat from the uniformly-heated plate by heating the heat conduction member.

Abstract: A light emitting device includes a substrate, a light emitting element, and an insulating resin member. The light emitting element has an upper surface and a lower surface opposite to the upper surface and is provided on the substrate so that the lower surface faces the substrate. The insulating resin member is provided between the light emitting element and the substrate and includes a first resin member and a second resin member. The first resin member is provided in a first region. The second resin member is provided in a second region different from the first region and has hardness different from hardness of the first resin member. A height from the substrate to the upper surface of the light emitting element facing the first resin member is different from a height from the substrate to the upper surface of the light emitting element facing the second resin member.

Abstract: A diffusion-cooled gas laser system that includes a first and a second electrode and a discharge gap arranged between the electrodes, wherein a dielectric is arranged on at least one of the electrodes on the discharge-gap side. The system is characterized in that the dielectric thickness d/?res the dielectric for influencing the discharge ?res of distribution in the discharge gap varies along at least one dimension of the electrode on which the dielectric is arranged, wherein d is the thickness of the dielectric, and ?res is the resultant constant of the dielectric, and, at its thickest point, has a thickness of at least 1 mm or is greater than one hundredth of the length of the electrode or is greater than one thousandth of a wavelength determined by the frequency of a radiofrequency electrical power to be coupled into the system.

Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

Abstract: An opto-electronic device (100) for processing optical and electric pulses includes a photoconductor device (10) with a sensor section (11) which is made of a band gap material and which has electrical sensor contacts (12, 13), and a signal processing device (20) which is connected with the sensor contacts (12, 13), wherein the photoconductor device (10) is adapted to create a photocurrent between the sensor contacts (12, 13) in response to an irradiation with ultra-short driving laser pulses (1) having a photon energy smaller than the energy band gap of the band gap material, having a non-zero electric field component (3) oriented parallel with a line (4) between the electrical sensor contacts (12, 13), and causing a charge carrier displacement in the band gap material, and wherein the signal processing device (20) is configured for an output of an electric signal being characteristic for at least one of carrier-envelope phase (CE phase), intensity, temporal properties, spectral intensity and spectral phase

Abstract: The invention relates to wavelength stabilization and wavelength multiplexing of multiple high-power multi-mode semiconductor lasers. The lasers are wavelength-stabilized in free space using multi-peak output reflectors to wavelength-lock their output at different reflection wavelength in dependence on operating conditions, to reduce output reflectivity required for locking and increase output power. Selecting output reflectors having different non-overlapping sets of reflectivity peaks for different lasers or groups of lasers enables combining their output by wavelength multiplexing.

Abstract: A laser source or a plurality of laser sources in a photonic integrated circuit (PIC) are provided with an electrical contact that is either segmented or is connected to a series of vernier resistor segments for supply of current to operate the laser source. In either case, at least one segment of the laser contact or at least one vernier resistor segment can be trimmed in order to vary the amount of current supplied to the laser source resulting in a change to its current density and, thus, a change in its operational wavelength while maintaining the current supplied to the laser source constant.

Abstract: A laser light source module includes: a plate-shaped stem; a power supply lead pin having an upper end protruding from an upper surface being one of main surfaces of the stem and a lower end penetrating to extend toward a lower surface side, the lower surface being the other of the main surface of the stem; a block fixed to the upper surface of the stem; a submount substrate that is fixed to a surface of the block and includes the semiconductor laser array mounted thereon, the surface being parallel to the upper surface of the stem; the semiconductor laser array located on the submount substrate such that a light emitting direction is parallel to the upper surface of the stem; and a collimator lens array that is located on a front surface of the semiconductor laser array and converts an output light beam of the semiconductor laser array into a parallel light beam.

Abstract: In one exemplary embodiment, an apparatus can be provided which includes at least one biological medium that causes gain. According to another exemplary embodiment, an arrangement can be provided which is configured to be provided in an anatomical structure. This exemplary arrangement can include at least one emitter having a cross-sectional area of at most 10 microns within the anatomical structure, and which is configured to generate at least one laser radiation. In a further exemplary embodiment, an apparatus can be provided which can include at least one medium which is configured to cause gain; and at least one optical biological resonator which is configured to provide an optical feedback to the medium. In still another exemplary embodiment, a process can be whereas, a solution of an optical medium can be applied to a substrate.

Abstract: A tunable lasing device including a vertical external cavity surface emitting laser, adapted to generate a fundamental laser beam in response to pumping from a pump source, said fundamental laser beam having a fundamental wavelength and a fundamental linewidth; a fundamental resonator cavity adapted to resonate the fundamental beam therein; a first optical element located within the fundamental resonator cavity for control of the fundamental linewidth of the fundamental beam; a Raman resonator located at least partially in said fundamental resonator adapted to receive the fundamental beam and comprising therein, a solid state Raman active medium located therein for generating at least a first Stokes beam from the fundamental beam wherein said Raman resonator cavity is adapted to resonate said Stokes beam therein and further adapted to emit an output beam; and further comprising a nonlinear medium located within the Raman resonator cavity for nonlinear frequency conversion of at least one of the beams present

Abstract: A method of varying the output of a free electron laser (FEL) on very short time scales to produce a slightly broader, but smooth, time-averaged wavelength spectrum. The method includes injecting into an accelerator a sequence of bunch trains at phase offsets from crest. Accelerating the particles to full energy to result in distinct and independently controlled, by the choice of phase offset, phase-energy correlations or chirps on each bunch train. The earlier trains will be more strongly chirped, the later trains less chirped. For an energy recovered linac (ERL), the beam may be recirculated using a transport system with linear and nonlinear momentum compactions M56, which are selected to compress all three bunch trains at the FEL with higher order terms managed.

Abstract: The invention relates to a method for generating electromagnetic radiation (preferably UV, VUV, XUV, or X-rays), to an optical short-period undulator (10) and to a free-electron laser comprising the latter. To accomplish the method, a high-energy electrically charged particle beam (5) is provided, and high-intensity electromagnetic pulses (7, 7a, 7b) are generated, and by interfering said pulses with one another an electromagnetic standing wave is created, wherein said standing wave has an electric field strength of a pre-determined peak value. The particle beam is directed through the non-steady electromagnetic field of the standing wave in or in the vicinity of a plane spanned by nodes with maximal electric field strength of said electromagnetic standing wave.

Abstract: Seeder for use with a fiber laser for generating an arbitrary shaped pulse, comprising an amplified spontaneous emission (ASE) source, a spectral filter and an arbitrary waveform generator (AWG) modulator, the ASE source for generating a continuous wave (CW) broadband pulse, the spectral filter being coupled with the ASE source for narrowing the CW broadband pulse, and the AWG modulator being coupled with the spectral filter for shaping the narrowed CW broadband pulse to an arbitrary pulse shape.

Abstract: A pixel structure for OLED display is disclosed. The pixel structure includes multi-row pixel unit groups, each pixel unit group includes a plurality of pixel units arranged repeatedly in sequence, and each pixel unit includes a first sub pixel, a second sub pixel and a third sub pixel, wherein the same sub pixels of the pixel units in adjacent two rows are arranged in dislocation in a horizontal direction. The pixel structure can widen the distance between the corresponding openings of the sub pixels when making the corresponding metal mask to enhance the strength of the metal mask that a pixel unit of a smaller size can be produced under the consideration of process condition, so as to improve the resolution of the OLED display.

Abstract: Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same. The device includes an edge-emitting semiconductor laser, said laser having a multi-layered waveguide, and said waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack.

Abstract: The disclosure relates to a free-electron laser system and a method for generating a packet of relativistic electrons capable of propagating in a first propagation direction (Oz), and a device for generating an undulator beam capable of interacting with the packet of relativistic electrons. In the system, the undulator beam results from combining, at an interaction area through which the propagation direction (Oz) of the packet passes, at least two laser beams propagating in different directions and each of which has at least one non-zero component in a plane orthogonal to the propagation direction (Oz) of the packet. The disclosure also relates to a method for generating a free-electron laser beam involving trapping and guiding a packet of relativistic electrons injected into an interaction area and implementing such a free-electron laser system.