Abstract: In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.

Abstract: A semiconductor laser wavelength control device capable of controlling the optical wavelength constant even if the optical output intensity of the semiconductor laser varies and permitting a reduction in overall size is to be provided. It is provided with control means which controls the optical wavelength of a laser diode 1 to a prescribed wavelength by driving a temperature control unit to control the temperature of the laser diode 1.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch ?a/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, ?0.6%??a/a??0.3% and 10 nm?dw?20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc?400 ?m and Rf×Rr?0.5.

Abstract: A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.

Abstract: To optimise the transformation rate (efficiency) in the optical frequency conversion of laser beams of ultra-short light pulses in optically non-linear media such as a crystal (56), a double refracting crystal (54) is arranged in the beam path before the optically non-linear medium (56). The length of the double refracting crystal (54) is selected and the orientation of its optical crystal axis in relation to the propagation direction of the laser beams involved in the frequency conversion is set such that the change caused by the double refracting crystal (54) in the location, time and direction of incidence of the laser pulses (14) and (16) on the optically non-linear medium (56) and the resulting change in the spatial and temporal overlap of the laser pulses in the optically non-linear medium (56) for optical frequency conversion in the crystal (56) give a conversion efficiency which is higher than the conversion efficiency which would be achieved without the double refracting crystal (54).

Abstract: A multiple-fiber, stretched, fused and cleaved coupler designed to act as an output window to a fiber laser array or fiber-coupled laser array, in which the stretch, length and/or position of the fibers is chosen facilitate the in-phase oscillation of the lasers in the array. The in-phase oscillation of the lasers is facilitated by making one or more of the fibers interferometrically dark. The other fibers, the interferometrically lit ones, are made to have fairly uniform intensity under the same collimated illumination.

Abstract: A laser scanning device includes a semiconductor laser that emits a laser beam, a laser power detector that detects laser beam power of the semiconductor laser, a reference voltage generator that generates reference voltage for controlling the laser beam power of the semiconductor laser in accordance with a laser power control signal provided from an external device, and a laser driver that compares the reference voltage generated by the reference voltage generator and the laser beam power detected by the laser power detector to control a driving current supplied to the semiconductor laser for emitting the laser beam. The laser scanning device further includes an abnormal condition detector that detects the laser power control signal received by the reference voltage generator.

Abstract: Dual-wavelength operation is easily achieved by biasing the gain section. Multiple gratings spaced apart from each other are separated from an output aperture by a gain section. A relatively low coupling coefficient, ?, in the front grating reduces the added cavity loss for the back grating mode. Therefore, the back grating mode reaches threshold easily. The space section lowers the current induced thermal interaction between the two uniform grating sections, significantly reducing the inadvertent wavelength drift. As a result, a tunable mode pair separations (??) as small as 0.3 nm and as large as 6.9 nm can be achieved.

Abstract: A microphotonic light source includes an optical pump and a plurality of waveguides that distribute optical pump power of the optical pump. At least one Erbium-doped laser ring is coupled to at least one of the waveguides so as to match the resonance condition of the optical pump.

Abstract: A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level.

Abstract: Systems and methods for stabilizing a CO2 laser are disclosed. The system includes a detector unit for measuring the power in a select portion of the output beam. The detector unit generates an electrical signal corresponding to the measured power. The modulation frequency of the signal used to modulate the relatively high-frequency radio-frequency (RF) pump signal is filtered from the electrical signal. The filtered electrical signal is then compared to a desired value for the output power in the output beam. Based on the comparison, a modulation control signal for modulating the RF pump signal is formed. The modulation control signal has a varying duty cycle that varies the amount of laser pump power to reduce or eliminate the measured variations in the output beam power. The result is an output beam power that remains stable over time.

Abstract: A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Abstract: A multiple-fiber, stretched, fused and cleaved coupler designed to act as an output window to a fiber laser array or fiber-coupled laser array, in which the stretch, length and/or position of the fibers is chosen facilitate the in-phase oscillation of the lasers in the array. The in-phase oscillation of the lasers is facilitated by making one or more of the fibers interferometrically dark and having a different propagation constant than the other fibers. The other fibers, the interferometrically lit ones, are made to have fairly uniform intensity under the same collimated illumination.

Abstract: The present invention provides an optical module able to reduce the power consumption thereof. The optical module, the package of which has a type of CAN or a co-axial shape, includes a Peltier device, a block, a laser diode (LD) and a photodiode. The block, mounting the LD on the side surface thereof, has a surface for reflecting the light emitted from the light-reflecting facet of the LD, and is mounted on the Peltier device. The photodiode, installed outside the Peltier device, receives the light emitted from the LD and reflected by the surface of the block. Since the photodiode is mounted outside the Peltier device, the cooling efficiency of the Peltier device may be enhanced, which saves the power consumption of the optical module.

Abstract: An slab CO2 laser includes spaced-apart elongated slab electrodes. A lasing gas fills a discharge gap between the electrodes. An RF power supply is connected across the electrodes and sustains an electrical discharge in the lasing gas in the discharge gap. Either one or two ceramic inserts occupy a portion of width of the electrodes and in contact with the electrodes. A discharge gap is formed between the portions of the width of the electrodes not occupied by the insert or inserts. Provision of the ceramic insert or inserts increases the resistance-capacitance (RC) time constant of the electrode impedance by increasing the capacitive component of the time constant. This hinders the formation of arcs in the discharge, which, in turn enables the inventive laser to operate with higher excitation power or higher lasing-gas pressure than would be possible without the dielectric insert. The ceramic insert also decreases the difference in impedance of the electrodes with and without a discharge.

Abstract: A grating-outcoupled microcavity disk resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a grating region in the plane of the grating-outcoupled microcavity disk resonator. The grating region provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission.

Abstract: Electrodes for a fluorine gas discharge laser are disclosed which may comprise a crown straddling the centerline axis between the pair of side walls and the pair of end walls, comprising a first material, forming at least a portion of the discharge region of the electrode; the crown in traverse cross section having the shape of the upper half of a canted ellipse rotated in the preionizer direction, such that a tangent to the short centerline axis of the ellipse forms an angle with the horizontal. Another embodiment may comprise an anode blade having a top portion and a first and second sidewall portion each intersecting the top portion; the anode blade being formed with the shape in cross section of the top portion being curvilinear and intersecting the generally straight potions of each of first and second sidewall portions along a radius of curvature and with the top portion beveled away from an asymmetric discharge side of the anode.

Abstract: The invention relates to an electrical circuit for a directly modulated semiconductor radiation source having a semiconductor radiation source, to which a modulated current is supplied in a manner dependent on a digital data signal, the falling signal edge of said current exhibiting peaking. According to the invention, provision is made of circuit means which are connected to an electrical contact point of the circuit and which reduce peaking of the falling signal edge when a predetermined value of the forward voltage across the semiconductor radiation source is undershot. This allows higher data rates to be achieved.

Abstract: A novel Q-switch device enables significant quality and value improvement for a Q-switched laser system by achieving a significant reduction of mode-beating noise during the pulsed output. The origin of mode-beating noise in a Q-switched laser is a result of high gain availability and amplification of competing standing-waves in formation, whose optical frequency is a product of natural selection via spatial hole burning in the gain medium. The novel Q-switch device employs an active, electro-optics or acousto-optics, Q-switch in combination with a saturable absorber device, to provide an optimized soft opening of the optical path and a controlled timing of a Q-switched laser. This novel combination offers larger modulation loss than otherwise possible with the active modulator alone, and it allows for higher gain build-up and energy extraction efficiency.