Patents Examined by Margaret Bueker
  • Patent number: 5114914
    Abstract: An improved method for producing high temperature superconductors comprising sintering ceramic superconductor material in a sealed confinement chamber made of non-reactive impervious material, thereby preventing loss of oxygen from the material during heating and eliminating the need for reoxygenation after sintering.
    Type: Grant
    Filed: March 13, 1989
    Date of Patent: May 19, 1992
    Assignee: Southwest Research Institute
    Inventors: Martin J. Sablik, Colin I. Nicholls, Robert E. Anderson
  • Patent number: 5098736
    Abstract: A method for preparing an electrophotographic photoreceptor comprising the steps of either forming a charge transporting layer comprising aluminum oxide and then forming a charge generating layer having amorphous silicon as the principal component, or forming a charge generating layer having amorphous silicon as the principal component and then forming a charge transporting layer comprising aluminum oxide. The charge transporting layer is formed by means of an ion assisted deposition method.
    Type: Grant
    Filed: January 3, 1989
    Date of Patent: March 24, 1992
    Assignee: Fuji Xerox Co., Ltd.
    Inventor: Yuzuru Fukuda
  • Patent number: 5077091
    Abstract: The object of the invention is a one-step deposition process of a coating of the ceramic type based on nitrides or carbonitrides of at least one metallic element selected from Cr, V, Zr, W, Mo, Co, Mn, Ni, Hf and Ta on a metallic or ceramic substrate, massive or obtained from fibres, by deposition in the vapor phase wherein a coating is deposited on the substrate by a chemical means at a pressure lower than 10 kPa at a temperature lower than 600.degree. C. and by using a system of precursors constituted simultaneously of:an organo-metallic precursor of the said metallic element selected from the organo-metallic compounds of the sandwich type of general formula:[Ar.sup.1 M Ar.sup.2.sub.n ]L.sub.x L'.sub.ya nitrogen precursor selected from ammonia and hydrazine.
    Type: Grant
    Filed: February 14, 1990
    Date of Patent: December 31, 1991
    Assignees: Nitruvid, C3F (Compagnie Francaise de Forges et Fonderies)
    Inventors: Jean-Francois Nowak, Frederic Schuster, Francis Maury, Roland Morancho
  • Patent number: 5045526
    Abstract: A method for producing insulated superconductor wire including the steps of a tubular glass preform, filling it with a superconductor material, suspending the preform within an oven to heat a section of the preform to approximately its softening point, and drawing the softened preform into a superconductor wire. A plastic coating can be applied to the wire to increase its durability. The completed wire preferably includes a superconductor core having its superconductor phase aligned with the longitudinal axis of the wire, a glass coating over the superconductor core, and a plastic coating over the glass coating.
    Type: Grant
    Filed: May 29, 1987
    Date of Patent: September 3, 1991
    Assignee: Hewlett-Packard Company
    Inventors: V. K. Nagesh, Daniel J. Miller
  • Patent number: 5041420
    Abstract: A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precursor elements on a substrate; 2) patterning the metal film; and 3) oxidizing the metal film to form a superconductor film. Because the process separates the metal precursor film formation, patterning, and oxidation steps, each of the steps can be individually optimized.
    Type: Grant
    Filed: June 26, 1987
    Date of Patent: August 20, 1991
    Assignee: Hewlett-Packard Company
    Inventors: V. K. Nagesh, John T. Anderson
  • Patent number: 5030476
    Abstract: A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means.
    Type: Grant
    Filed: May 21, 1990
    Date of Patent: July 9, 1991
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryuji Okamura, Hirokazu Otoshi, Tetsuya Takei
  • Patent number: 5026682
    Abstract: A superconducting device operable at temperatures in excess of 30.degree. K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high T.sub.c superconducting material, the SQUID device being operable at temperatures in excess of 60.degree. K. High energy beams, for example ion beams, are used to convert selected portions of the high T.sub.c superconductor to nonsuperconductor properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.
    Type: Grant
    Filed: April 13, 1987
    Date of Patent: June 25, 1991
    Assignee: International Business Machines Corporation
    Inventors: Gregory J. Clark, Richard J. Gambino, Roger H. Koch, Robert B. Laibowitz, Allan D. Marwick, Corwin P. Umbach
  • Patent number: 5026575
    Abstract: The present invention involves the use of organocalcium precursors for the chemical vapor deposition of thin CaF.sub.2 films under exceptionally mild conditions. This method is based on utilizing an organocalcium compound and a source of fluorine in a chemical vapor deposition reaction to form CaF.sub.2.
    Type: Grant
    Filed: July 11, 1989
    Date of Patent: June 25, 1991
    Assignee: Board of Regents, The University of Texas System
    Inventors: Richard A. Jones, Alan H. Cowley, Al F. Tasch, Jr.
  • Patent number: 5024879
    Abstract: Process for consolidating solid materials and/or articles, which exhibit at least a low cohesion degree area associated with at least one structural discontinuity, debouching or opening into the surface and/or pervious from the surface of said material and/or article, with ports or openings having sizes equal to at least 0.01 micron, which process comprises:(a) introducing into said low-cohesion area associated with a structural discontinuity vapors of at least one p-xylylene monomer and/or a monomer derivative thereof, operating under vacuum, and(b) polymerizing said monomer vapors in situ inside said low-cohesion area associated with said structural discontinuity.
    Type: Grant
    Filed: December 26, 1989
    Date of Patent: June 18, 1991
    Assignee: Ausimont S.p.A.
    Inventors: Vincenzo Massa, Aldo Cicuta, Walter Cavigiolo
  • Patent number: 5024861
    Abstract: The invention comprises a process for the preservation of timber with a boron based compound, such as trimethyl borate. The timer is dried to a low moisture content, is then subjected to a vapor of the boron compound in a suitable treatment vessel, and after vapor treatment is steam conditioned to return the moisture content of the timber to a normal working level. The vapor treatment is preferably carried out under heat and reduced pressure. Timber preserved by the process is also claimed.
    Type: Grant
    Filed: June 23, 1988
    Date of Patent: June 18, 1991
    Assignee: Her Majesty the Queen In Right of New Zealand Acting by and Through the Minister of Forestry for New Zealand
    Inventors: Peter Vinden, Russell J. Burton, Timote M. Vaioleti
  • Patent number: 5024901
    Abstract: The method for producing the disclosed material comprises chemical vapor depositing on the substrate a substantially columnar, intermediate layer of tungsten and chemical vapor depositing on the intermediate layer a non-columnar, substantially lamellar outer layer of a mixture of tungsten and tungsten carbide. The tungsten carbide comprises W.sub.2 C, W.sub.3 C, or a mixture of both wherein the ratio of the thickness of the tungsten intermediate layer to the thickness of the outer layer is at least: (a) 0.35 in the case of tungsten plus W.sub.2 C in the outer layer, (b) 0.6 in the case of a mixture of tungsten and W.sub.3 C in the outer layer and (c) 0.35 in the case of mixtures of tungsten and W.sub.2 C and W.sub.3 C in the outer layer. The chemical vapor deposition steps are carried out at pressures within the range of 1 Torr to 1,000 Torr and temperatures within the range of about 300.degree. to about 650.degree. C.
    Type: Grant
    Filed: May 3, 1989
    Date of Patent: June 18, 1991
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Diwakar Garg, Paul N. Dyer, Leslie E. Schaffer, Ernest L. Wrecsics, Duane Dimos, Carl F. Mueller
  • Patent number: 5021399
    Abstract: An improved method for preparing high temperature Bi-Sr-Ca-Cu-O superconductive films utilizing spray pyrolysis. The method can further include an additional annealing step to improve the electrical transport properties.
    Type: Grant
    Filed: March 10, 1989
    Date of Patent: June 4, 1991
    Assignee: Microelectronics & Computer Technology Corp.
    Inventors: Hsyh-Min Hsu, Ian Y. K. Yee
  • Patent number: 5019420
    Abstract: A process, based on sputtering from metal sources, is disclosed for forming a stable, reduced electrochromic layer in contact with an ionically conducting oxide. A deposited electrochromic layer is reduced by sputtering onto it an alloy or composite metallic thin film capable of injecting insertion atoms into the electrochromic layer. The metallic thin film, now partially depleted in insertion atoms, is converted into an electronically insulating but ionically conducting oxide layer in an oxidizing atmosphere. The resultant two-layer structure, consisting of the reduced electrochromic layer capped by the insulating oxide, may be used as on component in an all solid-state electrochromic device.
    Type: Grant
    Filed: January 17, 1989
    Date of Patent: May 28, 1991
    Assignee: EIC Laboratories, Inc.
    Inventor: R. David Rauh
  • Patent number: 5016563
    Abstract: In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
    Type: Grant
    Filed: August 29, 1989
    Date of Patent: May 21, 1991
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Toshiaki Murakami, Kazuyuki Moriwaki
  • Patent number: 5017403
    Abstract: A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.
    Type: Grant
    Filed: April 13, 1989
    Date of Patent: May 21, 1991
    Assignee: Massachusetts Institute of Technology
    Inventors: Stella W. Pang, Mark W. Horn
  • Patent number: 5015620
    Abstract: A high-T.sub.c superconductor contact unit having low interface resistivity is disclosed, as is a method for making the unit. An inert metal is deposited on the surface of the superconductor, which surface is preferably non-degraded, to form a unit with the surface of the superconductor, and where temperatures as high as 500.degree. C. to 700.degree. C. can be tolerated, the unit is oxygen annealed to establish a still lower surface resistivity between the surface of the high-T.sub.c superconductor and the inert metal, including a low surface resistivity of about 10.sup.-10 .OMEGA.-cm.sup.2 at high-T.sub.c superconductor operating temperatures. The superconductor is a metal-oxide superconductor, and may be rare earth, thallium, or bismuth based.
    Type: Grant
    Filed: November 22, 1988
    Date of Patent: May 14, 1991
    Assignees: The United States of America as represented by the Secretary of Commerce, Westinghouse Electric Corporation
    Inventors: John W. Ekin, Armand J. Panson, Betty A. Blankenship
  • Patent number: 5015493
    Abstract: A process and apparatus for coating conductive workpieces by ionized vapors with the assistance of a glow discharge includes providing a periodically pulsed input of energy for the discharge so that stress on the parts is reduced and a smooth coating results. Either a constant or periodic magnetic field is superimposed to influence the coating process for better results and better handling.
    Type: Grant
    Filed: January 11, 1988
    Date of Patent: May 14, 1991
    Inventor: Reinar Gruen
  • Patent number: 5013579
    Abstract: A cyclotron resonance chemical vapor deposition method for coating mechanical component parts, in which the method is particularly advantageous in coating for parts having substantially flat surfaces and corners which are subject to wear. The method includes disposing the parts in a reaction chamber, inputting a reactive gas into the reaction chamber and exciting the reactive gas in the reaction chamber by applying microwave electromagnetic energy in the presence of a magnetic field. A layer is deposited on the corners and flat surfaces of the parts by chemical vapor reaction such that the layer at the corners is thicker than that on the flat surfaces due to the concentration of the electric field at the corners, thus providing more wear resistance at the corners.
    Type: Grant
    Filed: September 26, 1989
    Date of Patent: May 7, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5011710
    Abstract: Surfaces of a structure are treated from a walkway within an enclosure suspended from the structure. The enclosure has a downwardly-converging cross section terminating in a vacuum conveyor for collecting and removing particles accumulating from the blasting process. The enclosure is preferably provided in modules. The vacuum conveyor removes the particulate material for transfer to conventional separating and re-cycling equipment. the enclosure and walkway are moveably suspended from transverse guideways secured to the structure.
    Type: Grant
    Filed: November 10, 1988
    Date of Patent: April 30, 1991
    Inventor: John F. Harrison
  • Patent number: 5009600
    Abstract: A method of painting a clay body and maintaining a durable, decorative surface finish by providing a barrier film layer between the paint coat layer and the clay body such that the oily substance contained in the clay body is blocked from permeating through the barrier film to adversely affect the paint coat layer.
    Type: Grant
    Filed: February 28, 1990
    Date of Patent: April 23, 1991
    Assignee: General Motors Corporation
    Inventor: Robert L. DeLaRosa