Abstract: The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion.

Abstract: The invention relates to a method for forming a carbon film on a substrate by irradiating a carbon monoxide-containing gas with an emission from a carbon monoxide laser without irradiating the substrate with the laser emission. The carbon film can be diamond, amorphous carbon, or graphite and the carbon film can be C.sup.13 -enriched or pure C.sup.13 by varying the isotope content of the CO gas in the chamber and/or in the laser.

Abstract: An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the pedestal isolates the purge cavity from the coating chamber except for a the slot. The wafer is heated by a pyrolytic carbon heater in the cavity and purge gas is fed to the purge cavity to flow through the slot and purge coating gas from diffusing into the purge cavity to coat the heater or the edge or backside of the wafer. In an alternative embodiment plural pedestals allow processing of plural wafers in a single cycle, and a vacuum lock and automatic handling devices are provided.

Abstract: A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

Abstract: An alcohol having an alpha hydrogen with the remaining groupings attached to the carbon atom being either hydrogen or an alkyl group having from 1 to 5 carbon atoms, preferably isopropanol, is added to the flow stream of a copper chelate gas, preferably a copper diketonate, the copper diketonate preferably being Cu(hfac).sub.2 or a composition identical thereto wherein one or more of the fluorine atoms is replaced by one of hydrogen atoms, and alkyl group having from one to five carbon atoms and a gas, preferably a reducing agent, preferably hydrogen. As a second embodiment, some or all of the copper can be replaced by aluminum to provide either Al(hfac).sub.3 or a combination of Cu(hfac).sub.2 and Al(hfac).sub.3.

Abstract: A laser vapor deposition apparatus includes a vacuum chamber which includes an exhaust port and in which a material to be vaporized and a substrate are enclosed, a laser beam source for irradiating the material to be vaporized with a laser beam so as to deposit from the material a desired compound onto the substrate, and a gas supply source which supplies to the surface of the material, a gas that can prevent changes in property of the material which could be caused by the laser beam irradiation.

Abstract: Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C.sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 --C.sub.8 alkyl and each R.sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometallic copper complexes is also provided.

Abstract: A quartz window for a wafer reactor vessel has a flat bow for withstanding the pressure differential between the ambient outside pressure and the reduced pressure in the wafer chamber. The bow is enhanced at elevated operating temperatures to compensate for the flattening effect of higher pressure differentials. The enhanced bowing is provided by a rigid peripheral flange which radially confines the window. The thermal expansion within the window is not expressed radially, but is directed outward to increase the bow.

Abstract: A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern.

Abstract: A method of fabricating an X-ray exposure mask including the steps of forming a .beta.-SiC membrane by chemcial vapor deposition and simultaneously doping the membrane with at least one of phosphorous, boron, nitrogen and oxygen.

Abstract: A process is disclosed for coating phosphors with hydrolyzed alkylaluminum. The hydrolyzed alkylaluminum coating renders the phosphors insensitive to atmospheric moisture. the coating process involves vaporizing an aluminum-containing precursor such as trimethylaluminum or triethylaluminum in an inert gas stream and passing this through a fluidized bed containing the phosphor particles. Water vapor is also passed through the fluidized bed and the water and aluminum precursor react on the surface of the phosphor particles to form hydrolyzed trimethylaluminum or other alkylaluminum. The hydrolyzed trimethylaluminum or other alkylaluminum phosphors are particularly useful in electroluminescent lamps.

Abstract: An optical disk is provided with a protective layer which is an adhesive which is non-tacky at room temperature in the case of a one sided disk; and which is useful as a tacky adhesive at room temperature in the case of a two sided disk made from two one-sided disks bonded to one another.

Abstract: The invention relates to a plated steel sheet for cans which must have high workability and corrosion resistance and can prevent bimetallic corrosion and a method of manufacturing the same. The plated steel sheet is manufactured by forming an electroplated chromium layer on the surface of a steel, removing a hydrated chromium oxide layer formed on the surface of the chromium layer, and forming an aluminum plating layer, so that the electroplated chromium layer and the aluminum plating layer are stacked in direct contact with each other. Another plated steel sheet is manufactured by forming a vacuum deposited chromium layer on the surface of a steel, and forming an aluminum plating layer.

Abstract: The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen and (3) a halogen through a reactor over the substrate material. The reactant gases may be pre-mixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pre-treatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.The reactant gas mixture preferably is passed through a reactor, a first portion of which is heated to a temperature of from about 400.degree. C. to about 920.degree. C. and more preferably from about 800.degree. C. to about 920.degree. C.

Abstract: A method for depositing high quality silicon dioxide in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in tool by using a high RF power density thereby depositing high quality silicon dioxide at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm.sup.2 and the deposition rate is from 600-1500 angstroms per minute for depositing high quality SiO.sub.2 films.

Abstract: This invention is directed to a process of protecting galvanized metal from white rust corrosion which comprises treating the galvanized metal, i.e., zinc-containing coating, at a temperature above about 125.degree. C. with at least one silica compound.

Abstract: In a process for the simultaneous deposition of a protective coating, e.g. an aluminium based coating, on internal and external surfaces of heat-resistant alloy parts, the parts are placed in a box containing a donor material, preferably in the form of granules, comprising the metal to be deposited, and an activator separate from the donor and comprising at least an anhydrous powder of chromium fluoride CrF.sub.3 to provide a source of fluorine. The box is heated to a temperature above 1000.degree. C. and a controlled flow of a carrier gas, reducing or neutral, is introduced into the box so as to establish a circulation of gases in the box whereby fluorinated vapors from thermal decomposition of the CrF.sub.3 activator contact the donor to form a volatile fluoride of the metal to be deposited, and the volatile vapor is carried into contact with the external and internal surfaces of the parts to be coated to deposit the coating thereon.

Abstract: A method of forming an artificial diamond, comprising applying a laser beam to a glassy solid carbon material, while moving a point on the glassy solid carbon material at which the laser beam is applied, to form a locally fused portion thereon, whereby every part of the locally fused portion is cooled as the point moves away therefrom. During cooling of the locally fused portion, an artificial diamond is formed in adjacent regions on both sides of the solidified locally fused portion.

Abstract: The surface properties of iron or ferrous alloy are improved by borosiliconizing the surface by contact with a stream of reducing gas containing hydrogen, optionally with an inert gas, to which a gaseous halide or hydride of boron and silicon have been added, either together or sequentially. The temperature of treatment is elevated, e.g. above 350.degree. C., but below 1200.degree. C. Diffusion coatings of both boron and silicon are formed in the ferrous surface. Typical surces of boron and silicon inlude boron trichloride, diborane and silane.

Abstract: In order to deposit films of materials, such as polysilicon or silicon dioxide, on major surfaces of substrates by a low-pressure chemical vapor deposition (LPCVD) process, gas, such as a silane gas, is admitted to a chamber at one end and is pumped through the chamber by a pump. The substrates are mounted such that the general direction of gas flow is perpendicular to the substrate major surface, and are heated to cause reaction of the gas to form the required film. In order to achieve uniformity of the deposited films over a number of substrates, the pressure in the deposition chamber is maintained below 10m Torr.