Patents Examined by Marian Gordon
  • Patent number: 4471270
    Abstract: This device comprises several charge-transfer shift registers integrated on the same semiconductor substrate and disposed one above the other along the axis Oy. The charge-transfer electrodes are common to all the registers and each package of charges injected under an electrode having received the impact of particles is transferred along axis Ox to underneath a diffused zone common to all the registers what causes currents to flow in two electrodes connected to the ends of the zone diffused along axis Ox.
    Type: Grant
    Filed: March 12, 1981
    Date of Patent: September 11, 1984
    Assignee: Thomson-CSF
    Inventor: Lucien Guyot