Abstract: This device comprises several charge-transfer shift registers integrated on the same semiconductor substrate and disposed one above the other along the axis Oy. The charge-transfer electrodes are common to all the registers and each package of charges injected under an electrode having received the impact of particles is transferred along axis Ox to underneath a diffused zone common to all the registers what causes currents to flow in two electrodes connected to the ends of the zone diffused along axis Ox.