Patents Examined by Marianne L. Padget
  • Patent number: 5147678
    Abstract: Improved modification of polymer surfaces is achieved by two-step reactions on polymer surfaces, particularly where at least one of the steps is a "downstream" or remote plasma treatment. For example, polymers may be treated with various combinations of the following: (1) downstream nitrogen plasma treatment; (2) ozone treatment; (3) corona discharge treatment; (4) downstream oxygen plasma treatment; or (5) downstream hydrogen plasma treatment.
    Type: Grant
    Filed: December 22, 1989
    Date of Patent: September 15, 1992
    Assignee: The University of Western Ontario
    Inventors: Renate Foerch, Duncan H. Hunter, N. Stewart McIntyre, Rana N. S. Sodhi
  • Patent number: 4943447
    Abstract: A process for heat treating a coating applied to an automobile body is disclosed. The process is carried out with apparatus which includes radiant heating elements for generating radiant heat in a predetermined path and convection heating elements for generating the flow of heated air. The method comprises the steps of positioning a freshly coated automobile body within the apparatus and heating the body with the radiant heat for a time sufficient to set the coating on Class A surfaces of the body. After the Class A surfaces are set, heated air is flowed around the body to heat the body and cure the coating on the Class A surfaces and the non-Class A surfaces.
    Type: Grant
    Filed: September 6, 1989
    Date of Patent: July 24, 1990
    Assignee: BGK Finishing Systems, Inc.
    Inventors: James S. Nelson, Scott L. Angell, Jack E. Mannerud, Charles H. Bergman, Jr.
  • Patent number: 4795657
    Abstract: There is disclosed a thin film photoprogrammable memory array with a substantially increased resistance associated with each cell of the array. First and second sets of orthogonally oriented address lines are formed on a substrate with the first set of address lines crossing the second set of address lines at insulated cross-overs. A plurality of amorphous silicon diodes are deposited on the members of the first set of address lines adjacent the insulated cross over points. Settable memory material, an optically programmable chalcogenide, is deposited in electrical contact with each of the amorphous silicon diodes and in electrical contact with a member of the second set of address lines adjacent the cross-over region. When the settable memory material has been set to its high conductivity state, the electrical resistance between the amorphous silicon diode and the adjacent member of the second set of address lines is proportional to an effective electrical length measured along the settable storage member.
    Type: Grant
    Filed: April 8, 1985
    Date of Patent: January 3, 1989
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Napoleon P. Formigoni, Zvi Yaniv