Abstract: A fiber spinning apparatus for charging a polymer-containing liquid stream, having at least one electrically charged, point-electrode positioned adjacent the intended path of said liquid stream and creating an ion flow by corona discharge to impart electrical charge to the polymer-containing liquid stream.

Abstract: An artificial firelog and firestarter chip producing apparatus comprising a cutting assembly, a compression conveyor auger assembly and a die. The apparatus converts standard waxed corrugated cardboard boxes into artificial firelogs by first slicing cardboard sheets into cardboard strips, then chopping the cardboard strips into cardboard segments in the cutting assembly. The cardboard segments are horizontally disposed between the rifling and compressed in the compression conveyor auger assembly and extruded in the die to form generally horizontally disposed, circular, longitudinally-shaped sections of a firelog. Firestarter chips are fabricated by the cutting assembly, which slices waxed cardboard sheets in conjunction with paper sheets into waxed cardboard and paper strips, then chopping the waxed cardboard strips into waxed cardboard segments and the paper strips into paper segments and waxed cardboard segments mix.

Abstract: An improved method for synthesizing superabrasive particles provides high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method includes forming a substantially homogeneous mixture of raw material and catalyst material or layers of raw material and metal catalyst. A plurality of crystalline seeds is placed in a predetermined pattern in the mixture or one of the layers to form a growth precursor. The growth precursor is maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. Advantageously, the patterned placement of crystalline seeds and disclosed processes allow for production of various morphologies of synthetic diamonds, including octahedral and cubic diamonds, and improved growth conditions generally. As a result, the grown superabrasive particles typically have a high yield of high quality particles and a narrow distribution of particle sizes.

Abstract: A center heated die plate for an underwater pelletizer radiates heat outwardly to the extrusion orifices and die faces of the die plate thereby maintaining the die plate and extrusion orifices at an elevated temperature to obtain optimum flow of molten polymer through the extrusion orifices. In one embodiment, a centrally located heating plate is mounted in a recess on the upstream face of the die plate inwardly of the nose cone. In a second embodiment, a cylindrical heating coil is placed in a hollow central core of the die plate between the nose cone on the upstream side and an insulation plug or plate on the downstream side. Heating leads extend through a single radial hole in the die plate to provide power to the center heating element.

Abstract: Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.

Abstract: In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.

Abstract: This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.

Abstract: Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

Abstract: A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented.

Abstract: Embodiments of stents having profiles that improve gripping of the stent on a stent delivery system are provided. Additionally, embodiments of molds for fabricating the stents are provided.

Abstract: A method for crystallization of a weakly acidic and/or weakly basic compound having an uncharged form and at least one charged form comprises the steps of: a) providing a solution of said compound in a solvent having an initial pH-value and an initial total concentration of said compound, said initial pH-value being chosen such that the compound is present in said solution predominantly in said charged form, said initial total concentration being chosen larger than the intrinsic solubility of said uncharged form; b) gradually changing the pH-value of said solution in a direction that leads to a decrease of said compound's solubility until reaching a predetermined target pH-value at which said solution is in a substantially saturated state and the concentration of said uncharged form is substantially equal to said intrinsic solubility thereof; and c) maintaining said solution in a substantially saturated state while allowing formation of crystals of said compound.

Abstract: A GaN substrate 1, a group III nitride semiconductor substrate, is provided with an OF portion 2 for the periphery thereof. The bevel 7 on the periphery of the nitric polarity face 5 side of the GaN substrate 1 is provided throughout the entire periphery of the GaN substrate 1 including the OF portion 2, wherein the beveling angle ?2 of the bevel 7 is given a value in the range over 30° to 60° inclusive.

Abstract: High pressure synthesis of various crystals such as diamond, cBN and the like can be carried out using reaction assemblies suitable for use in methods such as temperature gradient methods. The reaction assembly can be oriented substantially perpendicular to gravity during application of high pressure. Orienting the reaction assembly in this manner can avoid detrimental effects of gravity on the molten catalyst, e.g., convection, hence increasing available volumes for growing high quality crystals. Multiple reaction assemblies can be oriented in series or parallel, each reaction assembly having one or more growth cells suitable for growth of high quality crystals. Additionally, various high pressure apparatuses can be used. A split die design allows for particularly effective results and control of temperature and growth conditions for individual crystals.

Abstract: An improved method for synthesizing superabrasive particles provides high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method can include forming a growth precursor of a substantially homogeneous mixture of raw material and catalyst material or layers of raw material and metal catalyst. The growth precursor can have a layer of adhesive over at least a portion thereof. A plurality of crystalline seeds can be placed in a predetermined pattern on the layer of adhesive. The growth precursor can be maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. Advantageously, the patterned placement of crystalline seeds and disclosed processes allow for production of various morphologies of synthetic diamonds, including octahedral and cubic diamonds, and improved growth conditions generally.

Abstract: The invention relates to a method of making a film, and to a die for making the film. The fluid die includes a fluid feed manifold connected to a housing having positioned therein at least one fluid feed channel in fluid communication with the fluid feed manifold. The housing also includes at least one profiling block within the fluid feed channel.

Abstract: Disclosed is: (i) a mold-spraying apparatus of a molding system and/or (ii) a molding system having a mold-spraying apparatus, and/or (iii) a method of a mold spraying apparatus of a molding system, and/or (vi) a method of a molding system having a mold-spraying apparatus, amongst other things.

Abstract: It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L?) shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A?) or (B-B?) of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L?) shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

Abstract: A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with a light beam, and an image formation optical system which causes a light beam on an irradiation target surface a light intensity distribution having an inverse-peak-shaped pattern formed based on the light beam phase-modulated by the phase modulation element to fall on an irradiation target object. Dimensions of the basic pattern are not greater than a point spread function range of the image formation optical system converted in terms of the light modulation element. The phase modulation area is configured in such a manner that a phase distribution in a light complex amplitude distribution on the irradiation target surface becomes a saw-tooth-like distribution along a line segment in a lateral direction.

Abstract: An apparatus and method for extruding a multilayered article employs a shearing rod connected to the end of an extruder screw. The shearing rod is rotated along with the extruder screw and shears the polymer materials being advanced along an annular space between the shearing rod and the inner surface of a bore in a housing. A first melt stream of polymer material is advanced by the extruder screw into the annular space. A second melt stream of polymer material is fed (e.g., from a second extruder) through a passage in the housing into the annular space to join with the first melt stream therein. The rotation of the shearing rod shears the melt streams and swirls them together to produce a multiplicity of layers of the polymer materials.

Abstract: A press assembly is shown having a plurality of aligned press modules having a lower platen and an oppositely-disposed upper platen, the press modules defining a channel through the press assembly. A resinous wood fiber mat is fed into the channel. The upper and lower platens are driven along synchronized circular paths of travel such that the mat is compressed between the platens and is propelled by the platens through the channel. The platens are connected to eccentric shaft drive assemblies that move the platens along the desired circular path. The action of the eccentric shafts of each module are interconnected and coordinated by gear box units, and the gear box units are interconnected by intermediate gear boxes to synchronize the press assembly. A plurality of motors drives the eccentric shafts, and the supplied power may be distributed by the gear boxes.