Abstract: A syringe fill system is described, which is useful for filling syringes for dental anesthetic applications. The system incorporates capability for “push-pull”, “pull-push”, “push-push”, and “pull-pull” modes of operation, for loading syringes with compositions comprising multiple fluid components. A syringe fillable by such syringe fill systems is described, providing haptic and audible feedback to a user, to aid in administering precise amounts of therapeutic compositions. Also disclosed are cassette assemblies for use in such syringe fill systems. Such cassette assemblies may be formed of plastic and elastomeric materials of construction, as disposable or single-use components of the syringe fill system.

Abstract: A paint storage kit is provided for storing and dispensing paint in a manner that minimizes mess and loss of paint. The paint storage kit includes a larger storage container, a funnel, and a smaller touch-up container. The storage container includes a removable, flexible pour spout that reversibly connects with the opening of the storage container and facilitates clean transfer of paint into the touch-up container(s) or alternate location. The touch-up container includes a plastic tube, storage cap, and applicator pad. Paint is transferred to the storage container where it stored. The paint can then be transferred to one or more touch-up containers. The touch-up containers can apply small amounts of paint directly via an applicator pad affixed to the top of the touch-up container.

Abstract: Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.