Abstract: An impeller of a centrifugal compressor, the impeller including a web and blades secured to the web on a front face of the web. A point of intersection between a trailing edge and a blade root is at least one half-thickness of the web further forward than the blade root at an intermediate diameter of the impeller, and a point of intersection between the trailing edge and the blade tip is also further forward than the blade tip at an intermediate diameter of the impeller.

Abstract: A rotary-type filling machine includes a rotary body, a liquid distribution chamber, a plurality of filling flow path configuration units, each of which has a fluid path constituted by a liquid path connected to the liquid distribution chamber and a liquid valve and configured to individually introduce a liquid into a container, a filling control device, a liquid supply unit, a pressure difference information detection unit configured to detect pressure difference information between a liquid distribution chamber pressure, which is a pressure of the liquid in the liquid distribution chamber, and a filling atmospheric pressure detected as a pressure of a flow release unit in a filling flow path configuration unit at an arbitrary radial direction position of the rotary body, and a rotation information detection unit configured to detect rotation information of the rotary body.

Abstract: A mascara application system includes an applicator for mascara and a mascara container. The applicator may include two brushes, and have a reverse tweezers arrangement, by which the brushes may be spaced apart from one another when pressure is applied to a handle portion of the applicator, and the brushes may be positioned adjacent to one another when no pressure is applied to the handle portion. An optional applicator container may hold a handle portion of the applicator, while enabling its actuation to operate the applicator. The mascara container, which holds mascara and is configured to receive the brushes, may include a separate portal for each brush, as well as a squeegee or other element for removing excess mascara from each brush. Methods for applying mascara to lashes are also disclosed.

Abstract: A paint/stain stick pad, for use with a paint/stain reservoir handle and dispensing plunger for coating deck boards with opposing side edges having joints therebetween, has a platform having a top and a bottom. The top has a pivotal connection to the handle and a paint/stain inlet in flow communication with the paint/stain in the reservoir handle. The bottom has a paint/stain dispensing and spreading surface in flow communication with the paint/stain inlet for evenly dispensing the paint/stain along the dispensing surface onto the boards. A central cut out is provided in the platform into which a stain/paint applicator is mounted in a floating arrangement within the cut out and biased downwardly as to dispense paint/stain onto the opposing board edges in the joints.

Abstract: A device that is a packaged, individual deodorant powder applicator comprised of an application sheet with a non-impervious surface and a perimeter, an external sealed sheet surface, with a perimeter, the surface being impervious to liquids, capable of containing powder, and able to act as packaging; a means for sealing, at the perimeters, the external sheet surface to the application sheet, such as an adhesive; a powder reservoir created between the interior of the application sheet and the external sheet and contained by the sealed perimeter; powder within the reservoir; a means for closing the device halves without tab, such as adhesive; and a means for holding device such as a handle/spine wherein the sheets are configured and sealed to hold the powder in the reservoir where the using person may hold the device and apply the powder to the selected user's surface.

Abstract: The present invention relates to a photovoltaic module structure 1 and to a method for establishing an electrically conductive connection between two spaced contact layers 4?, 6?, in particular in the photovoltaic module structure 1 according to the invention. The production method is particularly simple and economical and the photovoltaic module structure 1 according to the invention enables a significant gain in efficiency.

Abstract: A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

Abstract: Provided is an example method of preparing a porous metal oxide structure, the method including adsorbing a metal oxide precursor onto a template having a networked structure of branched polynucleotides, decomposing and converting the adsorbed metal oxide precursor into a metal oxide, and removing the template. The networked structure of branched polynucleotides may be used as a template so as to facilitate control of the pore structure of a porous metal oxide structure.

Abstract: The light-emitting device includes a first lower electrode, a second lower electrode, a partition, a layer with high conductivity, light-emitting layers, and an upper electrode. The conductivity of the layer with high conductivity is higher than the conductivity of each of the light-emitting layers and lower than the conductivity of each of the lower electrodes and the upper electrode. The partition includes a first slope located on a first lower electrode side and a second slope located on a second lower electrode side. The thickness of the layer with high conductivity located over the first slope in a direction perpendicular to the first slope is different from the thickness of the layer with high conductivity located over the second slope in a direction perpendicular to the second slope.

Abstract: To provide a semiconductor device having an improved quality. The semiconductor device of the invention has a tape substrate having a semiconductor chip thereon, a plurality of land pads placed around the semiconductor chip, a plurality of wires for electrically coupling the electrode pad of the semiconductor chip to the land pad, and a plurality of terminal portions provided on the lower surface of the tape substrate. An average distance between local peaks of the surface roughness of a first region between the land pad of the tape substrate and the semiconductor chip is smaller than an average distance of local peaks of the surface roughness of a second region between the land pad of the tape substrate and the first region.

Abstract: One illustrative gate structure for an NFET device includes a gate insulation layer formed above a semiconducting substrate, a first metal layer comprised of titanium nitride (TiN) positioned above the gate insulation layer, a second metal layer comprised of tantalum nitride (TaN) positioned above the first metal layer, a third metal layer comprised of titanium aluminum (TiAl) positioned above the second metal layer, a fourth metal layer comprised of an aluminum-containing material positioned above the third metal layer, a fifth metal layer comprised of titanium positioned above the fourth metal layer, and a layer of aluminum positioned above the fifth metal layer.

Abstract: An organic light-emitting display device preventing edge defects between a pixel define layer and a pixel electrode, and a method of manufacturing the same. The organic light-emitting display device, comprises: a substrate; a pixel electrode disposed on the substrate and comprising a first patterned unit and a second patterned unit which are electrically disconnected; a pixel define unit disposed on the substrate and exposing the pixel electrode; an intermediate layer disposed on the pixel electrode and emitting light; and a counter electrode disposed on the intermediate layer and the pixel define layer.

Abstract: An output side of a driver output circuit of an LCD driver includes a first protective element having an n-type semiconductor region and a p-type semiconductor region formed in the n-type semiconductor region, and a second protective element having a p-type semiconductor region and an n-type semiconductor region formed in the p-type semiconductor region. The first and second protective elements are arranged in twos, respectively, adjacent to each other.

Abstract: A method of manufacturing a semiconductor device, includes forming a structure wherein a first alignment mark is provided in a first alignment-mark arrangement area of a first layer, a second alignment mark is provided in a second alignment-mark arrangement area of a second layer, a dummy pattern is provided above the first alignment-mark arrangement area, and substantially no dummy pattern is provided above the second alignment-mark arrangement area, and aligning a third layer provided above the structure by using the second alignment mark.

Abstract: A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.

Abstract: According to one embodiment of the present invention, a SOI device includes a first composite structure including a substrate layer, a substrate isolation layer being disposed on or above the substrate layer, a buried layer being disposed on or above the substrate isolation layer, and a semiconductor layer being disposed on or above the buried layer; a trench structure being formed within the first composite structure; and a second composite structure provided on the side walls of the trench structure, wherein the second composite structure includes a first isolation layer covering the part of the side walls formed by the semiconductor layer and formed by an upper part of the buried layer; and a contact layer covering the isolation layer and the part of the side walls formed by a lower part of the buried layer.

Abstract: Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Abstract: A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; a DC base electrode connected to the DC terminal; a radio frequency (RF) power terminal to which a radio frequency signal is supplied; an RF base electrode connected to the RF terminal; and a base layer connected to the DC base electrode and the RF base electrode.

Abstract: Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby a phase transitions may occur, and/or to create exciton crystals.

Abstract: A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates.