Abstract: A substrate processing apparatus includes: a plasma generating unit to excite a process gas into plasma state; a process chamber where a substrate is processed using the process gas excited in plasma state; a loading port installed at a sidewall of the process chamber, wherein the substrate is passed through the loading port when the substrate is loaded into the process chamber; a substrate support supporting the substrate in the process chamber; an electrode unit installed in the substrate support and including a plurality of divided electrodes; an impedance adjusting unit electrically connected to each of the plurality of electrodes to adjust an impedance thereof; and a control unit to control the impedance of the impedance adjusting unit so as to adjust the electrical potentials of the respective electrodes of the electrode unit. The substrate processing apparatus improves the uniformity of a substrate during a substrate processing process using plasma.

Abstract: In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.