Abstract: A resist film is formed from a chemically amplified resist material including a base polymer having a lactone group and having neither a hydroxyl group nor a carboxylic group as an adhesion group bonded to a polymer side chain; and an acid generator for generating an acid through irradiation with light. The resist film is irradiated with extreme UV of a wavelength of a 1 nm through 30 nm band for pattern exposure. The resist film is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film.

Abstract: A positive-working radiation-sensitive composition containing a resin having an acid-decomposing group having a specific acetal structure, and being decomposed by the action of an acid to increase the solubility thereof in an alkali developer; a compound generating an acid by the irradiation of an active light or radiation and contributes to the decomposition reaction of the acid-decomposing group of the resin; a compound generating an acid by the irradiation of an active light or radiation but does not contribute to the decomposition reaction of the acid-decomposing group of the resin; a surface active agent, and a solvent.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a sub resolution assist feature that is transmissive of at least a portion of the radiation. The sub resolution assist feature alters a pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the sub resolution assist feature. The invention further includes methods of forming radiation-patterning tools, and the radiation-patterning tools themselves.