Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; L1 represents a single bond or —CO—O*; R3 represents an alkyl group, and —CH2— included in the group may be replaced by —O— or —CO; R4 represents a fluorine atom, an alkyl fluoride group or an alkyl group, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—; R5 represents a hydrogen atom, an alkylcarbonyl group or an acid-labile group; m2 and m3 represent an integer of 1 to 3, m4 represents an integer of 0 to 2, and m5 represents 1 or 2, in which 3?m2+m3+m4+m5?5.

Abstract: A pattern forming method includes forming a resist film having a first region, a second region, and a third region, on a substrate, irradiating the first region with light or an energy ray in a first irradiation amount, and irradiating the second region with light or an energy ray in a second irradiation amount, the second irradiation amount being smaller than the first irradiation amount. The pattern forming method also includes dissolving the resist film of the first region by using first liquid, forming a coating film on a side surface of the resist film after the resist film of the first region is dissolved, and dissolving the third region by using second liquid that is different from the first liquid.

Abstract: A photosensitive resin composition comprising (A) a cardo-based resin comprising a repeating unit represented by chemical formula 1 (comprising chemical formula 4); (B) a reactive unsaturated compound; (C) a pigment; (D) an initiator; and (E) a solvent, and a light blocking layer using the same having improved adhesiveness or adhesion are provided.

Abstract: A chemically amplified photosensitive composition used for forming a patterned resist film by photolithography on a metal surface of a substrate which at least partly has a surface consisting of metal. The composition includes an acid generator which generates an acid by irradiation of active rays or radioactive rays; and a compound and/or a precursor compound, in which the molar absorption coefficient ? at a wavelength of 365 nm of the compound is at least 3000, the compound has a metal coordination group, and the compound can be formed from the precursor compound during formation of the patterned resist film.

Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.

Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

Abstract: A resist composition comprising a quencher containing a nitroxyl radical having an iodized aliphatic hydrocarbyl group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A photosensitive resin composition capable of reducing residues upon the development thereof, reducing melting flow, and forming a pattern layer having a high taper angle, by containing two or more kinds of different cardo binders; and a display device including a pattern layer containing a polymerization reaction product of the photosensitive resin composition.

Abstract: A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.

Abstract: A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; R1 is hydrogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C2-30 alkynyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C3-30 heteroaryl, or substituted or unsubstituted C4-30 heteroarylalkyl; and R2 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2

Abstract: The present invention relates to a crosslinking agent compound in which a terminal crosslinkable functional group is capped with a silane-based protecting group, a photosensitive composition including the same, and a photosensitive material using the same.

Abstract: A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.

Abstract: A method of patterning a substrate includes depositing an overcoat in openings of a relief pattern. The relief pattern includes a solubility-shifting agent and a deprotectable monomer sensitive to the solubility-shifting agent. The overcoat includes another deprotectable monomer sensitive to the solubility-shifting agent. The overcoat has a solubility threshold relative to a predetermined developer that is lower than the solubility threshold of the relief pattern relative to the developer. The method includes activating the solubility-shifting agent to at least reach the solubility threshold of the overcoat without reaching the solubility threshold of the relief pattern, diffusing the solubility-shifting agent a predetermined distance from structures of the relief pattern into the overcoat to form soluble regions in the overcoat, and developing the substrate with the developer to remove the soluble regions of the overcoat.

Abstract: The phase shift film has a function to transmit an exposure light of a KrF excimer laser at a transmittance of 2% or more, and a function to generate a phase difference of 150 degrees or more and 210 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film, in which the phase shift film has a structure where a lower layer and an upper layer are stacked in order from a side of the transparent substrate, in which a refractive index nL of the lower layer at a wavelength of the exposure light and a refractive index nU of the upper layer at a wavelength of the exposure light satisfy a relation of nL>nU, in which an extinction coefficient kL of the lower layer at a wavelength of the exposure light and an extinction coefficient kU of the upper layer at a wavelength of the exposure light satisfy a relation of kL>kU; and in which a thickness dL of the lower layer and a thicknes

Abstract: This resist pattern forming method comprises: a step for coating a substrate with a chemically amplified resist; a subsequent step for forming a latent image of a pattern by exposing the resist film on the substrate; a subsequent step for irradiating the exposed resist film selectively with infrared light from a first heating source having wavelengths 2.0-6.0 ?m; a subsequent step for heating the substrate by means of a second heating source that is different from the first heating source for the purpose of diffusing an acid that is produced in the resist film by exposure; and a subsequent step for forming a pattern of the resist film by supplying a developer liquid to the substrate. Consequently, roughening of sidewalls of the resist pattern can be suppressed.

Abstract: In general, according to one embodiment, there is provided an active material. The active material contains a composite oxide having an orthorhombic crystal structure. The composite oxide is represented by a general formula of Li2+wNa2?xM1yTi6?zM2zO14+?. In the general formula, the M1 is at least one selected from the group consisting of Cs and K; the M2 is at least one selected from the group consisting of Zr, Sn, V, Nb, Ta, Mo, W, Fe, Co, Mn, and Al; and w is within a range of 0?w?4, x is within a range of 0<x<2, y is within a range of 0?y<2, z is within a range of 0<z?6, and ? is within a range of ?0.5???0.5.

Abstract: A secondary battery includes a cathode, an anode, and a nonaqueous electrolytic solution. The anode contains a carbon material and silicon oxide, and a weight ratio (%) of the silicon oxide with respect to a total of the carbon material and the silicon oxide is within a range of 0.01% to 20% both inclusive. The nonaqueous electrolytic solution contains an unsaturated cyclic carbonate ester.

Abstract: A transition metal composite hydroxide can be used as a precursor to allow a lithium transition metal composite oxide having a small and highly uniform particle diameter to be obtained. A method also is provided for producing a transition metal composite hydroxide represented by a general formula (1) MxWsAt(OH)2+?, coated with a compound containing the additive element, and serving as a precursor of a positive electrode active material for nonaqueous electrolyte secondary batteries. The method includes producing a composite hydroxide particle, forming nuclei, growing a formed nucleus; and forming a coating material containing a metal oxide or hydroxide on the surfaces of composite hydroxide particles obtained through the upstream step.

Abstract: A transition metal composite hydroxide can be used as a precursor to allow a lithium transition metal composite oxide having a small and highly uniform particle diameter to be obtained. A method also is provided for producing a transition metal composite hydroxide represented by a general formula (1) MxWsAt(OH)2+?, coated with a compound containing the additive element, and serving as a precursor of a positive electrode active material for nonaqueous electrolyte secondary batteries. The method includes producing a composite hydroxide particle, forming nuclei, growing a formed nucleus; and forming a coating material containing a metal oxide or hydroxide on the surfaces of composite hydroxide particles obtained through the upstream step.

Abstract: The present invention refers to a separator for an electrochemical device and an electrochemical device having the same. More specifically, the separator of the present invention comprises a porous substrate; a first porous coating layer formed on one surface of the porous substrate and comprising a mixture of inorganic particles and a first binder polymer; and a second porous coating layer formed on the other surface of the porous substrate and comprising a product obtained by drying a mixture of a solvent, a non-solvent and a second binder polymer. Such separator of the present invention can have good thermal safety due to a porous organic-inorganic coating layer formed on one surface thereof, and superior adhesiveness due to a porous coating layer made of a binder thin film formed by applying and drying a mixture of a binder polymer and a non-solvent on the other surface thereof.