Patents Examined by Mark H. Huff
  • Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
    Patent number: 6737198
    Abstract: A photomask fabricated by a photomask fabrication method has a transparent substrate (10), a shade pattern (11) formed in a hollow section (23), and a phase shift pattern (102) having a flat surface that is selectively formed on the transparent substrate (10) and the shield pattern (11).
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: May 18, 2004
    Assignee: Renesas Technology Corp.
    Inventor: Kazuya Kamon