Patents Examined by Mark I. Huff
  • Patent number: 6756164
    Abstract: An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: June 29, 2004
    Assignee: Infineon Technologies AG
    Inventors: Torsten Franke, Henning Haffner, Armin Semmler, Martin Verbeek
  • Patent number: 6746816
    Abstract: A photosensitive resin composition which is excellent in both sensitivity and resolution, can be rapidly developed with an aqueous alkali solution alone, further has excellent adhesion to substrates, and can give through imidization a light-colored polyimide resin film; and a circuit board having an insulating layer obtained from the photosensitive resin composition. The photosensitive resin composition comprises a poly(amic acid) resin, a 1,4-dihydropyridine derivative and a polyethylene glycol, and may optionally further contain a polyhydric phenol compound. This photosensitive resin composition can be developed at a high rate with a developing solution consisting only of an aqueous alkali solution. As a result, a satisfactory negative-pattern film which is a light-colored film can be formed with high sensitivity, high resolution, and a reduced film loss while preventing film coloration.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: June 8, 2004
    Assignee: Nitto Denko Corporation
    Inventors: Shunichi Hayashi, Hirofumi Fujii