Abstract: An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]?40 atomic %, [In]?15 atomic %, [Sn]?4 atomic % are satisfied.

Abstract: A composition for solar cell electrodes, a solar cell electrode, and a method of manufacturing a solar cell, the composition including a conductive powder; a glass frit; and an organic vehicle, wherein the conductive powder includes a first silver powder having a cross-sectional particle porosity of about 0.1% to about 6%.

Abstract: A single-walled carbon nanotube composition includes single-walled carbon nanotubes substantially enriched in semiconducting single-walled carbon nanotubes in association with a polymer having one or more oligoether side groups. The oligoether side groups render the composition dispersable in polar organic solvents, for example alkyl carbitols, permitting formulation of ink compositions containing single-walled carbon nanotubes substantially enriched in semiconducting single-walled carbon nanotubes. Such ink compositions may be readily printed using common printing methods, such as inkjet, flexography and gravure printing.

Abstract: Provided is a method for preparing a graphene/ternary material composite for use in lithium ion batteries, comprising the following preparation steps: (a) mixing a ternary material and a graphene oxide powder in an organic solvent to form a mixed dispersion; (b) adding a reducing agent to the mixed dispersion from step (a), and carrying out a reduction reaction at a reduction temperature of 80-160° C. while stirring, to obtain a reduction reaction mixture after a reduction time of 60-240 min; and (c) evaporating the solvent from the reduction reaction mixture from step (b) while stirring, and drying and then annealing the mixture at a low temperature in an inert atmosphere to obtain a graphene/ternary material composite having a three-dimensional network structure. Also provided is a graphene/ternary material composite prepared by using this method.

Abstract: The invention provides an elastic conductor which is excellent in stretchability and hardly causes a decrease in conductivity even when stretched. The elastic conductor includes an elastomer and two types of conductive particles, wherein the two types of conductive particles are flake-like particles and nanoparticles, and the conductive particles are dispersed throughout the elastomer.

Abstract: A Group VB element doped with a ?-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the ?—Ga2O3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10?4 to 1×104?·cm, and/or the carrier concentration is in the range of 5×1012 to 7×1020/cm3. The preparation method comprises steps of: mixing M2O5 and Ga2O3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity ?-Ga2O3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.

Abstract: Electrical field grading material which comprises a non-polar elastomeric polymer, a phyllosilicate filler and a carbon black filler, wherein any carbon black filler present in the electric field grading material has a dibutyl phthalate (DBP) absorption number from 30 to 80 ml/100 g. The above material may be used in electrical cable accessories, particularly electrical cable joints or terminations for medium or high voltage cable. The electrical field grading material according to the present invention has varioresistive properties, particularly a significant variation of electrical conductivity as a function of the applied voltage within a reduced voltage range, so as to guarantee a high value of conductivity above a critical value of the electrical field, and therefore to ensure an even distribution of the electrical field lines within the material.

Abstract: An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]?37 atomic %, [Sn]?15 atomic %, and [Ga]/([In]+[Zn])?0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

Abstract: The present disclosure provides organic-inorganic hybrid polymer particles, which have desirable surface chemistry and optical properties that make them particularly suitable for biological and optical applications. The present disclosure also provides methods of making organic-inorganic hybrid polymer particles. The present disclosure also provides methods of using the organic-inorganic hybrid polymer particles for biological and optical applications.

Abstract: Provided is a graphene additive, having a viscosity between 1000 and 40000 cps and a grind fineness not greater than 15 ?m, and comprising: nano-graphene sheets and a silane coupling agent, wherein a weight ratio of the nano-graphene sheets to the silane coupling agent is 0.1-15:99.9-85, and carbon atoms on a surface of the nano-graphene sheets form chemical bonds Si—O—C with oxygen substituents of the silane coupling agent. The present application further provides a method of preparing the graphene additive.

Abstract: Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.

Abstract: An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10): in which X1 represents a nitrogen atom or CRa, and rings A to B each represent a specific nitrogen-containing ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; V1 represents NRd, an oxygen atom, a sulfur atom, or a selenium atom; Ra to Rd each represent a hydrogen atom or a substituent; R1 represents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.

Abstract: A liquid composition. The liquid composition comprises (i) particles comprising a complex of a polythiophene and a polyanion, (ii) at least one tetraalkyl orthosilicate, (iii) at least one solvent, and (iv) gallic acid, at least one derivative of gallic acid or a mixture thereof. Also provided are a process for the preparation of a liquid composition, a liquid composition obtainable by such a process, a process for the preparation of a layered body, the layered body obtainable by such a process, a layered body and the use of a liquid composition.

Abstract: The invention is directed to electrically conductive particles comprising a metallic core, a dielectric layer encapsulating said metallic core, and a silver containing outer-layer, wherein said metallic core comprises or consists of elemental metal selected from the group consisting of aluminum, copper, iron, nickel, zinc, and alloys, and mixtures thereof, said dielectric layer comprises at least one metal oxide selected from the group consisting of the group consisting of silicon oxide, aluminum oxide, titanium oxide, zirconium oxide, tin oxide, organic polymer, and mixtures thereof, wherein said silver containing layer is a continuous and opaque layer, wherein a silver ion coordinating layer is arranged between said dielectric layer and said silver containing layer and, optionally a further outer surface modification layer in amount of 0 to 3 wt.-%, based on the total weight of the electrically conductive particles.

Abstract: Oxide compositions comprising a modified structure which includes the formula ABOz. The A component may comprise at a cation of least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Gd, and Zn, and the B component may comprise a cation of at least one element selected from the group consisting of V, Cr, Mn, Fe, Co, and Ni. Batteries and supercapacitors comprising the oxide compositions of the present disclosure and methods of making the oxide compositions of the present disclosure are also provided.

Abstract: Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.

Abstract: The present invention provides a sulfur-based active material prepared using an inexpensive polymer material as a starting material and a method of preparing the sulfur-based active material. A non-aqueous electrolyte secondary battery such as a lithium-ion secondary battery provided with an electrode comprising the sulfur-based active material has a large charging and discharging capacity and an excellent cyclability.

Abstract: A composition for producing an electrically conductive layer according to a slotted-nozzle method includes 2-30 wt. % of a protective colloid mixture which is soluble or dispersible in water, 1-15 wt. % of a conductive carbon modification, 5-50 wt. % of metal-coated particles, 50-90 wt. % of an aqueous solvent, the dynamic viscosity of the conductive composition being less than 400 mPa·s, wherein the composition comprises 0.1-10 wt. % of an ethylene-vinyl acetate copolymer. The electrically conductive layer being one or both of a pair of conductive layers having a luminous layer with electroluminescent pigments arranged therebetween in an electroluminescense device or related method for producing an electroluminescense device.

Abstract: An electrochemical storage device including a conductive material and an electrochemical storage device material held together by a covalently crosslinked binder matrix. A method of forming an electrode for an electrochemical storage device, the method including the steps of: mixing electrochemical storage device material, conductive material, linear polymer, and crosslinker with one or more solvents, the resultant mixture forming an electrode slurry, crosslinking the linear polymer with the crosslinker to thereby create a covalently crosslinked polymer network of the polymer and crosslinker, the crosslinked polymer network physically or chemically binding together the electrochemical storage device material and the conductive material.

Abstract: Provided is a method for producing the positive electrode active material for nonaqueous electrolyte secondary batteries, including a first step of mixing a Li-metal composite oxide powder which is represented by the general formula: LizNi1-x-yCoxMyO2 (where 0?x?0.35, 0?y?0.35, and 0.97?z?1.30 are satisfied, and M is at least one element selected from Mn, V, Mg, Mo, Nb, Ti and Al) and constituted by primary particles and secondary particles, to an alkaline solution with a W compound dissolved therein, and immersing a resulting mixture, followed by solid-liquid separation, to obtain a W mixture with W uniformly dispersed on the surface of the primary particles of the composite oxide, and a second step of heat-treating the W mixture to thereby form a compound containing W and Li on the surface of the primary particles of the composite oxide powder.