Abstract: A battery has a battery case, a cover (1), cells located in the case and at least one opening (2) for venting of the gases occurring in the cells, into which a flashback protection frit (3) is inserted. To improve such a battery, a baffle wall (12) is placed in of the flashback protection frit (3) (FIG. 3).

Abstract: A method for producing sublithographic etching masks for creating structured features in semiconductor products having a large scale of integration, includes applying lines that are orthogonal to one another in successive steps with the aid of the spacer technique. Through the use of various etching steps, a grid of extremely small etching masks is obtained, which is formed by the intersection points of the lines. The size of the etching masks is determined by the layer thickness of the spacer layer, and not by the feature or structure size of the photographic technique.