Patents Examined by Martha Sulsky
  • Patent number: 6025250
    Abstract: A method of preparing a semiconductor wafer includes the step of forming first and second layers of a first material on opposing respective first and second faces of the semiconductor wafer. The second layer of the first material is then removed from the second face of the semiconductor wafer. More particularly, the first material can be polysilicon. Warping of the semiconductor wafer can thus be reduced.
    Type: Grant
    Filed: November 10, 1998
    Date of Patent: February 15, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Seok Ha, Jin-Kee Choi, Cheol Jeong