Patents Examined by Mary R Huff
  • Disposable hard mask for photomask plasma etching
    Patent number: 6749974
    Abstract: A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.
    Type: Grant
    Filed: September 3, 2002
    Date of Patent: June 15, 2004
    Assignee: Photronics, Inc.
    Inventor: David Y. Chan