Patents Examined by Mat Whipple
  • Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma
    Patent number: 5753564
    Abstract: A method for forming a thin film of a silicon oxide on a silicon substrate is disclosed. An Si oxide film is formed by an ECR plasma. CVD with the use of a silicon compound gas containing fluorine, whereby the generation of particles can be suppressed to improve the quality of the device and the yield, the planarity of the Si oxide film functioning as an interlayer dielectric film or a passivation film can be improved, and the higher speed operation in a semiconductor device can be accomplished.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: May 19, 1998
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Takashi Fukada