Abstract: The present technology relates to an electronic device. According to the present technology, a memory device may include memory cells respectively connected to a plurality of word lines, a peripheral circuit configured to perform a read operation of reading data stored in selected memory cells connected to a selected word line among the memory cells, and a read operation controller configured to control the peripheral circuit to apply a pass voltage to adjacent word lines adjacent to the selected word line during the read operation, discharge the pass voltage to a target pass voltage less than the pass voltage after a predetermined time elapses, and obtain data stored in the selected memory cells through bit lines connected to the selected memory cells after a target read time elapses, after a voltage applied to the adjacent word lines is discharged to the target pass voltage.

Abstract: Method, systems and apparatuses may provide for technology that executes a margin test of a first memory storage based on a subset of first signals associated with the first memory storage. The technology determines, based on the margin test, first margin data to indicate whether the first memory storage complies with one or more electrical constraints. The technology determines, based on the first margin data, whether to execute a signal training process.

Abstract: A redundant circuit assigning method a includes: first test item is executed and first test data is acquired; a first redundant circuit assigning result including the number of assigned local redundant circuits and position data of the assigned local redundant circuits is determined according to the first test data; a second test item is executed and second test data is acquired; when fail bits acquired during execution of the second test item include one or more fail bits beyond the repair range of the assigned local redundant circuits and assigned global redundant circuits, and the assignable redundant circuits have been assigned out, target position data of fail bits in a target subdomain and a related subdomain is acquired based on the first test data and the second test data; and a second redundant circuit assigning result is determined according to the first test data and the second test data.

Abstract: An automated test equipment (ATE) apparatus comprising a tester processor operable to generate commands and data for coordinating testing of a plurality of devices under test (DUTs). The ATE further comprises a field programmable gate array (FPGA) communicatively coupled to the tester processor, wherein the FPGA comprises routing logic operable to route signals associated with the commands and data in the FPGA based on a type of the device under test (DUT). Further, the ATE comprises a connector module communicatively coupled to the FPGA comprising a socket to which the DUT connects and further comprising circuitry for routing the signals to a set of pins on the DUT, wherein the set of pins are associated with a first type of DUT. The circuitry can support multiple different DUT types having a common form factor but different pinout assignments.

Abstract: A testing method for a packaged chip includes: acquiring a target chip; in the post-burn-in test process, testing a first data retention time of each memory unit on the target chip; comparing the first data retention time of each memory unit with a preset reference time; and, determining that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time. In the present application, by testing the first data retention time of each memory unit on the target chip in the post-burn-in test process, it is determined that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time.

Abstract: Example embodiments relate to low-overhead, bidirectional error checking for a serial peripheral interface. An example device includes an integrated circuit. The device also includes a serial peripheral interface (SPI) with a Master In Slave Out (MISO) channel and a Master Out Slave In (MOSI) channel. The MOSI channel is configured to receive a write address, payload data, and a forward error-checking code usable to identify data corruption within the write address or the payload data. The integrated circuit is configured to calculate and provide a reverse error-checking code usable to identify data corruption within the write address or the payload data. Additionally, the integrated circuit is configured to compare the forward error-checking code to the reverse error-checking code. Further, the integrated circuit is configured to write, to the write address if the forward error-checking code matches the reverse error-checking code, the payload data.

Abstract: A memory module is operable in a computer system to communicate data with a system memory controller via a system memory bus. The memory module comprises a plurality of memory devices mounted on a circuit board, a data module mounted on the circuit board and coupled between the plurality of memory devices and the system memory bus, and a control circuit mounted on the circuit board and coupled to the data module, the plurality of memory devices, and the system memory bus. The data module includes a plurality of data handlers in a plurality of integrated circuits. The memory module is operable in any of a plurality of modes, including a first mode and a second mode. The plurality of memory devices in the first mode is accessed by the system memory controller for normal memory read or write operations.

Abstract: Systems and methods are provided for testing a Device Under Test (DUT) in its working environment. A control computer is coupled to an air compressor and generates a temperature control signal that is provided to the air compressor to generate an amount of hot air or cold air to set the temperature of the DUT's working environment to a desired test temperature. The control computer also generates at least one test signal that is sent to a hardware test element for testing at least one memory component of the DUT at the desired test temperature and obtaining test results. The control computer analyzes the test results to determine a parameter adjustment for the at least one memory element so that it operates in a stable manner at the test temperature.

Abstract: A method for analyzing device test data includes accessing a core analytics rule that is based on manufacturing data of a plurality of devices. Each of the plurality of devices are produced in one of a plurality of manufacturing facilities and are of a same type as a first device being tested on a tester. The method also includes receiving initial test results of a plurality of other devices of a same type tested at a testing facility, generating, based on the initial test results, an edge analytics rule, modifying the core analytics rule based on the edge analytics rule, wherein the modified core analytics rule including modified binning limits, applying the modified core analytics rule to testing data obtained by testing the first device, and determining, based on applying the modified core analytics rule, that the first device is an outlier with respect to the modified binning limits.

Abstract: Reception of a frame is appropriately stopped. A communication system is a communication system that includes first and second information processing devices. The first information processing device performs control such that a signal (which is a signal having backward compatibility) serving as an index by which the second information processing device receiving a frame stops the reception of the frame is transmitted to the second information processing device. The second information processing device performs control such that the reception of the frame is stopped based on the signal (which is a signal having backward compatibility) serving as an index by which reception of the frame is stopped when the frame transmitted from the first information processing device is received.

Abstract: An embodiment of an electronic memory apparatus may include storage media, and logic communicatively coupled to the storage media, the logic to determine if a mode is set to one of a first mode or a second mode, perform a soft post package repair in the first mode, and undo the soft post package repair in the second mode. Other embodiments are disclosed and claimed.

Abstract: A first serializing stage is provided with a stream of data words composed of sub-words that each have values that associate each of the sub-words with the same error detection code value. For example, the values selected for each sub-word may each be associated with even parity. One or more serializing stages time-multiplex the sub-words into a stream of sub-word sized data. At the serializing stage that receives sub-word sized data stream, the data is checked to determine whether any of the sub-words is no longer associated with the error detection code value. Serializing/deserializing stages are selectively controlled to replace one or more data bits from a word being serialized/deserialized with an error detecting code value (e.g., parity). A subsequent serializing/deserializing stage is enabled to use the inserted error detecting code values and the data in the received words to determine whether an error has occurred.

Abstract: A method for configuring a storage circuit, including: writing data via an input line into the storage circuit by a software write access; writing a bit-wise inverted form of the data via the input line into the storage circuit by a subsequent software write access; and generating an error signal if a comparison based on the written data and the written bit-wise inverted form of the data indicates a storage circuit configuration error, wherein the storage circuit permits hardware read access and lacks software read access.

Abstract: An I/O sensor including: a programmable delay line; a delayed clocked receiver having the following inputs: (a) a data signal and a reference voltage that also serve as inputs to a reference clocked receiver that is configured to sample the data signal received from an interconnect lane between two integrated circuits (ICs) of a multi-IC module, and (b) a delayed clock signal received from the programmable delay line, wherein the delayed clock signal is a delayed version of a clock signal that clocks the reference clocked receiver; a comparison circuits configured to compare a data signal output of the delayed clocked receiver and a data signal output of the reference clocked receiver; and a controller configured, based on a comparison result of the comparison circuit and on the amount of delay that caused it, to estimate a quality of connectivity between the two ICs over the interconnect lane.

Abstract: Error detection and correction (EDAC) logic of a memory subsystem may be monitored for error corrections, with the EDAC logic configured to use a first EDAC level. The number of error corrections made by the EDAC logic while using the first EDAC level during a time interval may be determined. The EDAC logic may be switched from using the first EDAC level to using a second EDAC level when the number of error corrections using the first EDAC level during the time interval exceeds a threshold.

Abstract: A solid-state memory may have many non-individually erasable memory cells arranged into calibration groups with each memory cell in each respective calibration group using a common set of read voltages to sense programmed states. An evaluation circuit of the solid-state memory may be configured to measure at least one read parameter for each calibration group responsive to read operations carried out upon the memory cells in the associated calibration group. An adjustment circuit of the solid-state memory may redistribute the memory cells of an existing calibration group into at least one new calibration group in response to the at least one measured read parameter.

Abstract: Aspects of the disclosure provide a method and device performing input bit allocation that includes receiving broadcasting information bits, generating timing related bits for the broadcasting information bits, and selecting a portion of the generated timing related bits. The method and device can further include allocating each of the selected timing related bits to selected input bits of an encoder, so that each of the selected timing related bits is allocated to an input bit of the encoder corresponding to an available bit channel of the encoder where the selected inputs bits of the encoder correspond to encoded bits that are located in a front portion of the encoded bits.

Abstract: Methods, systems, and devices for managing information protection schemes in memory systems are described. A memory device may dynamically select an information protection scheme from a set of information protection schemes. In some examples, the memory device may identify a quantity of defective blocks in each plane associated with a control. The memory device may then identify a quantity of planes that satisfy a block threshold. In some cases, the memory device may select an information protection scheme using the quantity of planes. The information protection scheme may be an example of a redundant array of independent nodes scheme, and may indicate a quantity of planes used in performing a protected write operation.

Abstract: A memory system comprises a memory device including plural memory blocks, and a controller coupled to the memory device. The controller controls the memory device to read a first group including plural data items and a parity associated with the plural data items from first locations in the plural memory blocks. The controller generates a new parity when the plural data items and the parity include plural errors, substitute one of the plural errors with the new parity and another of the plural errors with dummy data. The controller controls the memory device to program a second group including the new parity and the dummy data in second locations in the plural memory blocks. The second locations are different from the first locations.

Abstract: The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.