Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Abstract: Disclosed is an etching apparatus enabling to increase productivity of etching glass substrates. The present invention includes an etching bath having an etchant, a plurality of sensors inside the etching bath detecting a level of the etchant, and a deionized water tube spraying a deionized water to the sensors.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Abstract: An etching apparatus has an antenna connected to a radio frequency power supply through a matching box. At the center region of a dielectric plate, a columnar conductor and a cylindrical conduct ring are arranged. Between the columnar conductor and the conductor ring, four conducting wires, each of which forms a substantially circular loop outside the conductor ring, are connected in parallel with the radio frequency power supply. A loop formed by each of the conducting wires is arranged at an equal spacing with each other to be rotationally-symmetric around the axis orthogonal to a mounting table, with the columnar conductor as the center. The loops are arranged on the same plane such that a surface where each loop is placed faces the mounting table.

Abstract: A plasma processing system includes a source of plasma, a substrate and a shutter positioned in close proximity to the substrate. The substrate/shutter relative disposition is changed for precise control of substrate/plasma interaction. This way, the substrate interacts only with a fully established, stable plasma for short times required for nanoscale processing of materials. The shutter includes an opening of a predetermined width, and preferably is patterned to form an array of slits with dimensions that are smaller than the Debye screening length. This enables control of the substrate/plasma interaction time while avoiding the ion bombardment of the substrate in an undesirable fashion. The relative disposition between the shutter and the substrate can be made either by moving the shutter or by moving the substrate.

Abstract: An inductively coupled plasma source is provided with a compact inductive element that is configured to produce a spatially distributed plasma particularly suitable for processing large scale wafers. The element in its preferred embodiment is formed of a sheet material for compactness and ease in configuring. The element is located outside of a dielectric wall or window of a processing chamber, generally congruent to the dielectric wall or window, formed of one or more layers or loops. The conductor provides a conductive path around each loop that has a serpentine or oscillating configuration that renders the path around each loop greater than the circumference of the element. The path is so shaped by cutouts along the side edges of the element. The conductor is formed of alternating sections of large and small aspect ratio, defined as the width across the path to the thickness of the sheet. The sections are also defined by cutouts in the sheet.

Abstract: A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.

Abstract: A method of producing a highly etched electrode for a capacitor from a foil is disclosed. The method comprises first applying a laser beam to the foil to form a plurality of marks on the foil surface and then etching the foil. Preferably, the laser marks facilitate etching of foil surface in areas near the marks and retard etching of foil surface inside the marks. After etching, the foil is further processed in a combination of optional steps such as forming and finishing steps. The laser marking of the foil allows for positional control of tunnel initiation, such that tunnel initiation density and the location of tunnel initiation is controlled. By controlling the position of tunnel initiation, foils are etched more uniformly and have optimum tunnel distributions, thus allows for the production of highly etched foils that maintain high strength and have high capacitance.

Abstract: An apparatus for low-damage, anisotropic etching of substrates having the substrate mounted upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

Abstract: A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.

Abstract: Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate.

Abstract: A first conductive plate (31A) constituting the radiation surface of a slot antenna (30A) inclines with respect to a first dielectric member (13) opposed to the radiation surface of the slot antenna (30A). Consequently, a plasma generated by the electric field of an electromagnetic field entering directly from the slot antenna (30A) can be set dominant over a plasma generated by the electric field of a standing wave formed in a processing vessel (11). Since the former can be controlled more easily than the latter, the plasma distribution can be improved.

Abstract: An etching apparatus is disclosed, in which a bubble plate includes a plurality of air tubes having a plurality of holes being arranged in a straight line, and a straight frame having an air path and being connected to both ends of the air tube. The etching apparatus of the present invention reduces the probability of prolonged exposure to harmful chemicals by workers. Additionally, the guide does not have to be separated from the etching apparatus to separate the bubble plate. The etching apparatus reduces the probability of etching inferiority and/or substrate damage caused by incorrect assembly.

Abstract: An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.

Abstract: An etchant fume exhaust apparatus is installed in a system performing an etching process during fabrication of LCDs. The etchant fume exhaust apparatus prevents the contamination and corrosion of the etching system by allowing both gaseous and liquid etchant to be discharged safely. The etchant fume exhaust apparatus includes an exhaust hole that provides a passage to discharge gaseous etchant, an exhaust plate located under the exhaust hole that collects condensed etchant dripping from the exhaust hole, a support part that fixes the exhaust plate to the exhaust hole, and an exhaust line connected to the bottom of the exhaust plate through which the etchant collected in the exhaust plate is removed from the etchant plate.

Abstract: A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.

Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

Abstract: The described embodiments relate to slotted substrates and methods of forming same. One exemplary method forms a first slot portion into a first surface of a substrate, the first slot portion defining a footprint at the first surface. The method also forms a second slot portion through the first slot portion; and, forms a third slot portion through a second surface of the substrate sufficiently to intercept the second slot portion to form a fluid-handling slot through the substrate.

Abstract: A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region.