Patents Examined by Mayla Gonzalez Ramos
  • Patent number: 10504660
    Abstract: Disclosed is a method for adsorbing a dye for a dye-sensitized solar cell. The method includes: coating a paste including metal oxide nanoparticles on the upper surface of a titanium oxide thin film and calcining the coated paste to form a porous film; adding an additive to a sensitizing dye solution to promote the adsorption of the dye; and dipping the porous film in the sensitizing dye solution to adsorb the sensitizing dye onto the surface of the porous film. The sensitizing dye solution is a dispersion of the sensitizing dye in an organic solvent. Also disclosed are a working electrode prepared using the sensitizing dye solution and a dye-sensitized solar cell including the working electrode. The addition of the additive shortens the time of dye adsorption. Despite the shortened adsorption time, the dye does not undergo desorption in the long term as well as in the short term, ensuring long-term stability of the solar cell.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: December 10, 2019
    Assignee: Korean Institute of Science and Technology
    Inventors: Min Jae Ko, Bong Soo Kim, Jin Young Kim, Hong Gon Kim, Hae Jung Son, Doh-Kwon Lee, Jin Ah Lee, Hee Suk Jung, Hwa Young Jin
  • Patent number: 10461351
    Abstract: A polymer electrolyte membrane for a fuel cell includes a cross-linking polymer in which a polyhedral oligomeric silsequioxane (POSS) is cross-linked with a hydrocarbon-based polymer and a membrane-electrode assembly for a fuel cell includes the polymer electrolyte membrane.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: October 29, 2019
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jong-Chan Lee, Kihyun Kim, Jungmoon Bae, Pil Won Heo, Jun-Young Kim, Tae-Yoon Kim, Chan Ho Pak
  • Patent number: 10451586
    Abstract: A gas sensor system (1) including a gas sensor (2) and a sensor control section (40) including detection circuits (41), (42) and (43) for detecting the terminal potentials V1, V2, and V3 of first to third terminal T1 through T3. The sensor control section (40) includes a circuit (44) for applying an examination potential Vex to the second terminal T2, a first circuit (45) which has a predetermined resistance R1c and disconnectably connects the first terminal T1 and the second terminal T2, a second circuit (46) which has a predetermined resistance R2c and disconnectably connects the second terminal T2 and the third terminal T3, and terminal potential detection means S5 for detecting the terminal potentials V1, V2, and V3 using the detection circuits in a state in which the examination potential Vex is applied to the second terminal T2 and switches SW1 and SW2 are turned on.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: October 22, 2019
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Yuzo Higuchi, Tomonori Uemura
  • Patent number: 10439094
    Abstract: Provided is a method for manufacturing a solar cell element that can increase the film thickness for collector electrodes formed in a screen printing process and reduce the resistance value of the same as well as contribute to improvements in conversion efficiency. When a collector electrode for a solar cell element is formed by screen printing of a conductive paste, that screen-printing process is repeated a plurality of times. At this time, the squeegee speed during the second or later screen printing is faster than the squeegee speed during the first screen printing. The second and later screen printing is superimposed on the collector electrode printed the first time; therefore, the faster the squeegee speed is, the better the plate release is for the paste and foundation. The amount of paste applied increases, and the film for the collector electrode that is formed becomes thicker.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: October 8, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryo Mitta, Yoko Endo, Takenori Watabe, Hiroyuki Otsuka
  • Patent number: 10432132
    Abstract: A solar mounting system includes at least one solar panel with a panel frame and a support structure including at least one elongated support rail configured to support the panel frame of the at least one solar panel. The elongated support rail includes a grounding structure with a raised edge formed from material of the at least one elongated support rail. The raised edge is configured to cut through a protective coating surrounding a conductive material forming the panel frame, thereby grounding the solar panel by providing direct electrical contact between the panel frame and the at least one elongated support rail. This automatic grounding does not require additional grounding equipment or elements to be added to the solar mounting system.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: October 1, 2019
    Assignee: RBI Solar, Inc.
    Inventors: Richard T. Reilly, William L. Vietas
  • Patent number: 10424708
    Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: September 24, 2019
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Patent number: 10411643
    Abstract: A floating solar array made of a closed loop of flexible high density polyethylene pipes with elbows, T fittings and couplings. An anti-lift membrane fills with water and mitigates the wind forces. The array can have a stabilizing skirt going downwardly from the border of the array, especially when it is used offshore in the sea. A vertical axis tracking system with windlasses, two anchoring points and four mooring lines allows all the solar panels to face the sun throughout the day. For small lakes or mine tailing, the two anchor points will be onshore, on a concrete foundation. Winches to wind and unwind the mooring lines are located at the anchor point or on the solar array. For larger water areas, or offshore applications in the sea water, the anchor points are under water; using typically a concrete block or a suction pile solution for each anchor.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: September 10, 2019
    Assignee: 4CSOLAR, Inc.
    Inventors: Liliane Smadja, Paul Isaac Smadja
  • Patent number: 10381505
    Abstract: A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: August 13, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Pravin Patel, Arthur Cornfeld, John Spann, Mark A. Stan, Benjamin Cho, Paul R. Sharps, Daniel J. Aiken
  • Patent number: 10381501
    Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: August 13, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Yong Lin, Paul R. Sharps, Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho
  • Patent number: 10374112
    Abstract: A multijunction solar cell includes an upper first solar subcell, a second solar subcell adjacent to the first solar subcell, a third solar subcell adjacent to the second solar subcell, and a graded interlayer adjacent to the third solar subcell. The graded interlayer has a band gap that is greater than the band gap of the third solar subcell and is composed of a compositionally step-graded series of (InxGa1-x)yAl1-yAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1. A fourth solar subcell is adjacent to the graded interlayer and is lattice mismatched with respect to the third solar subcell. The graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell. A lower fifth solar subcell is adjacent to the fourth solar subcell.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: August 6, 2019
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Pravin Patel, Mark A. Stan, Benjamin Cho, Paul R. Sharps, Daniel J. Aiken, John Spann
  • Patent number: 10355156
    Abstract: [Problem] To provide a light-concentrating mechanism that is suitable for photovoltaic power generation. [Solution] This light-concentrating mechanism comprises an angle selective reflection means that reflects light having an incident angle of at least a first threshold angle and transmits at least some of the light having an incident angle smaller than the first threshold angle, and an angle-increase reflection means that reflects incident light at an angle greater than the incident angle of said light, the two means being arranged so as to have a gap therebetween.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: July 16, 2019
    Assignees: Holomedia, LLC, Egarim Corporation Japan
    Inventors: Hideyoshi Horimai, Toshihiro Kasezawa, Chikara Kasezawa
  • Patent number: 10347782
    Abstract: A silicon wafer-based photovoltaic module is described, which includes a first outer protective layer and a second outer protective layer, wherein both outer protective layers comprise a low- or no-sodium glass or low- or no-alkali compositions. The photovoltaic modules show resistance to water ingress, no or reduced potential-induced sodium ion drift, and reduced potential induced degradation.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: July 9, 2019
    Assignee: Corning Incorporated
    Inventors: Bruce Gardiner Aitken, Mark Francis Krol, James Ernest Webb
  • Patent number: 10347810
    Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: July 9, 2019
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Patent number: 10295712
    Abstract: A multi-layer backsheet for a photovoltaic module comprising a first layer having a reflectance of more than 25% of a light with a wavelength anywhere from about 1000 nm to about 2100 nm, and a reflectance of less than 35% of all light with a wavelength from about 380 nm to about 750 nm; and a second layer having a reflectance of more than 50% of all light with a wavelength from about 380 nm to about 2000 nm. A photovoltaic module comprising the multi-layer backsheet, a method of making the photovoltaic module, and a method of converting sunlight into electricity by exposing the photovoltaic module to sun light.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: May 21, 2019
    Assignee: HONEYWELL INTERNATIONAL INC.
    Inventors: Awdhoot V. Kerkar, Neo Huang, Jeffrey D. Pratt
  • Patent number: 10283279
    Abstract: A photoelectric conversion device of an embodiment includes, in sequence: a substrate; a first electrode; a photoelectric conversion layer containing a perovskite compound and a solvent; and a second electrode. The perovskite compound has a composition represented by a composition formula of ABX3. The A represents at least one selected from a monovalent cation of a metal element and a monovalent cation of an amine compound. The B represents a bivalent cation of a metal element. The X represents a monovalent anion of a halogen element. The number of molecules of the solvent with respect to one crystal lattice of the perovskite compound ranges from 0.004 to 0.5.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: May 7, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi Jung, Takeshi Gotanda
  • Patent number: 10276738
    Abstract: A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: April 30, 2019
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Pierre Mur, Hubert Moriceau, Pierre-Jean Ribeyron
  • Patent number: 10177296
    Abstract: Provided is a thermoelectric conversion element having a greater Seebeck coefficient (S) than the conventional ones. In a thermoelectric conversion element: a nonmagnetic Heusler alloy film (10), a ferromagnetic Heusler alloy film (11) and a nonmagnetic layer (12) are stacked in the named order; a pair of electrodes (23, 24) are disposed for deriving, in accordance with a temperature gradient occurring in parallel to the direction of magnetization (41) of the ferromagnetic Heusler alloy film, an electromotive force occurring perpendicularly to the direction of magnetization of the ferromagnetic Heusler alloy film; a pair of electrodes (21, 22) are disposed for deriving an electromotive force occurring in parallel to the direction of magnetization of the ferromagnetic Heusler alloy film; and the electromotive forces occurring due to an ordinary Seebeck effect and a spin Seebeck effect are simultaneously derived.
    Type: Grant
    Filed: September 5, 2011
    Date of Patent: January 8, 2019
    Assignee: HITACHI, LTD.
    Inventors: Jun Hayakawa, Yosuke Kurosaki
  • Patent number: 10145816
    Abstract: A gas sensor element (10) includes a composite ceramic layer (111) having an insulation portion (112) and an electrolyte portion (131) disposed within a through hole (112h), and a first conductor layer (150) extending in a continuous manner on a first insulation main surface (113) as well as on a first electrolyte main surface (133). The electrolyte portion (131) is thinner than the insulation portion (112), and the first electrolyte main surface (133) is located on a thickness-direction inward side DTN. The insulation portion (112) has, on a first insulation main surface side, a protruding portion (122) overlying the first electrolyte main surface (133). The thickness of the protruding portion (122) reduces toward the inward side DR1 of the through hole (112h). The first conductor layer (150) extends in a continuous manner on a protrusion surface (122s) as well as on the first electrolyte main surface (133).
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: December 4, 2018
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Takashi Konno, Satoshi Okazaki, Masaki Nakagawa, Haruhiko Shigeta
  • Patent number: 9997659
    Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 12, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Richard R. King, Christopher M. Fetzer, Nasser H. Karam
  • Patent number: 9985160
    Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 29, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Richard R. King, Christopher M. Fetzer, Nasser H. Karam