Abstract: A display device includes a pixel circuit, an insulating layer covering the pixel circuit, a first partition portion which is disposed on the insulating layer and extends in a first direction, a second partition portion which is spaced apart from the first partition portion in a second direction intersecting the first direction and extends in the first direction, a plurality of connection partition portions disposed between the first and second partition portions, where each of the plurality of connection partition portions extends in the second direction, a first electrode disposed on the first partition portion and electrically connected to the pixel circuit, a second electrode disposed on the second partition portion, and a light emitting element disposed between the plurality of connection partition portions and electrically connected to the first electrode and the second electrode.

Abstract: A workpiece processing system and method provides an end effector coupled to a workpiece transfer apparatus. The end effector has support members for selectively contacting and supporting a workpiece. One or more temperature sensors are coupled to the support members and are configured to contact a backside of the workpiece to measure and define one or more measured temperatures of the workpiece. A heated chuck has a support surface at a predetermined temperature, and is configured to radiate heat from the support surface. A controller control the workpiece transfer apparatus to selectively support the workpiece at a predetermined distance from the support surface of the heated chuck to radiatively heat the workpiece, and to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on the one or more measured temperatures.

Abstract: Structures including a photodiode and methods of fabricating such structures. A substrate has a top surface, a well, and a trench extending from the top surface to the well. A photodiode is positioned in the trench. The photodiode includes an electrode that is provided by a first portion of the well. A bipolar junction transistor has an emitter that is positioned over the top surface of the substrate and a subcollector that is positioned below the top surface of the substrate. The subcollector is provided by a second portion of the well.

Abstract: An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing the ultraviolet light-emitting element, a light-emitting element package, and a lighting device. An ultraviolet light-emitting element according to an embodiment includes: a first conductive type first semiconductor layer having a light extraction structure; an etching-blocking layer on the first conductive type first semiconductor layer; a first conductive type second semiconductor layer on the etching-blocking layer, an active layer on the first conductive type second semiconductor layer; a second conductive type semiconductor layer on the active layer; and an electron spreading layer disposed between the etching-blocking layer and the active layer, wherein the electron spreading layer includes a first conductive type or an undoped AlGaN-based or a GaN-based semiconductor layer, an undoped AlN, and a first conductive type AlGaN-based second semiconductor layer.