Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.
Type:
Grant
Filed:
December 14, 2017
Date of Patent:
March 22, 2022
Assignee:
Sony Semiconductor Solutions Corporation
Inventors:
Junpei Yamamoto, Takushi Shigetoshi, Takanori Tada, Shinpei Fukuoka