Patents Examined by Meiya Liz
  • Patent number: 11282884
    Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: March 22, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Junpei Yamamoto, Takushi Shigetoshi, Takanori Tada, Shinpei Fukuoka