Abstract: A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intracavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.

Abstract: A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The semiconductor laser device is provided with a negative electrode, a GaN substrate, a first n-type clad layer, an n-type light shielding layer that shields light, a second n-type clad layer, an n-type optical waveguide layer, a first carrier stop layer, an active layer, a second carrier stop layer, a p-type optical waveguide layer, a p-type clad layer, a p-type contact layer, and a positive electrode laid in this order.

Abstract: A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount of organic adhesive utilized within the volume of the sealed sealing members is 1.0 g/ml or less, thereby causing a saturation concentration of outgas components generated from the adhesive to be less than 1000 ppm following a deaerating process. At least one optical component (e.g., a collimating lens) is adhesively fixed to a fixing member (e.g., a collimating lens holder) by inserting an adhesive composition including an alicyclic epoxy compound, a compound having an oxytanyl group, and a catalytic amount of an onium salt photoreaction initiator therebetween at an adhesive thickness of 0.05 ?m or greater and 5 ?m or less. Thereafter, the adhesive composition is cured by an activated energy beam to fix the optical component to the fixing member.

Abstract: A line narrowing method and module for a narrow band DUV high power high repetition rate gas discharge laser producing output laser light pulse beam pulses in bursts of pulses, the module having a nominal optical path are disclosed which may comprise: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a first tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic, by selecting an angle of transmission of the laser light pulse beam containing the pulse toward the dispersive center wavelength selection optic; a second tuning mechanism operative in part to select the angle of incidence of the laser light pu

Abstract: According to the invention, a diode side pumped laser is provided. The laser has an optical cavity formed between a first and a second reflective surface. A Nd:YLF lasing medium is located within the cavity along its optical axis. The Nd:YLF lasing medium can desirably be a single Nd:YLF lasing rod which has a length of 90 mm or more. A plurality of diode bars are provided in optical communication with the Nd:YLF lasing medium preferably a lasing rod. The diode bars extend along substantially the pumpable length of the lasing rod and radially around the periphery of the lasing rod. The diode bars have radiation outlets in optical communication with the lasing rod for supplying electromagnetic radiation on pumping paths to the rod. The lasing rod receives an average linear power density from the diode bars of less than 50 watts/cm. The pumping paths traverse substantially the entire pumpable length of the lasing rod substantially perpendicular to the direction of propagation of energy in the laser cavity.

Abstract: A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser.

Abstract: A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semiconductor multiple layer reflecting mirror, a second semiconductor multiple layer reflecting mirror formed on the active region, a current confining layer formed between the first and second multiple layer reflecting mirrors, the current confining layer including an oxidized region at a peripheral portion, a first electrode formed at a side of the first semiconductor multiple layer reflecting mirror, and a second electrode formed at a side of the second semiconductor multiple layer reflecting mirror, wherein the first electrode is electrically connected to the semiconductor layer of the first semiconductor multiple layer reflecting mirror.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) assembly including a VCSEL structure having a light-emitting region located on its surface, a relatively wettable region of a surface modifier coating formed over the light emitting region, and a microlens formed on the relatively wettable region. A relatively non-wettable region of the surface modifier coating is formed around the light-emitting region (e.g., on the electrode surrounding the light-emitting region). The surface modifier coating is formed, for example, from one or more organothiols that change the surface energies of the light-emitting region and/or the electrode to facilitate self-assembly and self-registration of the microlens material. The microlens material is printed, microjetted, or dip coated onto the VCSEL structure such that the microlens material wets to the relatively wettable region, thereby forming a liquid bead that is reliably positioned over the light-emitting region. The liquid bead is then cured to form the microlens.

Abstract: Laser processing methods, systems and apparatus having a super-modulating power supply or pumping subsystem and high beam quality (i.e., brightness) are disclosed. The methods, systems and apparatus have significant benefits, improved operation characteristics and material processing capability over currently available methods, systems and apparatus. In at least one embodiment, the beam quality of a high power solid state laser is improved in the presence of thermal lensing. High power laser cutting, scribing, and welding results are improved with a combination of modulation and high beam quality while providing for improved processing speeds.

Abstract: GaAs(1?x)Sbx layers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, and AsH3 (or TBAs) are used to fabricate the GaAs(1?x )Sbx layer. Beneficially, the GaAs(1?x)Sbx layer's composition is controlled by the ratio of As to Sb. The MOCVD growth temperature is between 500° C. and 650° C. The GaAs(1?x)Sbx layer is beneficially doped using CCl4 or CBr4. A heavily doped GaAs(1?x)Sbx layer can be used to form a tunnel junction with n-doped layers of InP, AlInAs, or with lower bandgap materials such as AlInGaAs or InGaAsP. Such tunnel junctions are useful for producing long wavelength VCSELs.

Abstract: A semiconductor laser formed from a semiconductor wafer has an active layer, at last two optical cladding layers, and a ridge waveguide. A ridge top surface of the ridge waveguide is deposited from a first surface of the semiconductor laser wafer by a first height. A plurality of semiconductor mesas are formed on the semiconductor laser wafer and have mesa top surfaces disposed from the first surface by a second height greater than the first height so that the plurality of semiconductor mesas shield the ridge waveguide from mechanical damage.

Abstract: In apparatus for wavelength stabilizing and spectrally narrowing an output beam of a diode-laser, a cylindrical lens is arranged to collimate the beam in the fast axis of the diode laser without reducing divergence in the slow axis of the diode-laser. An optical fiber is arranged to receive the fast-axis collimated beam from the lens. The optical fiber has a multimode core surrounded by a first cladding, the first cladding being surrounded by a second cladding. The core of the optical fiber includes a wavelength selective Bragg grating and has a numerical aperture of about 0.06 or less. The optical fiber has a numerical aperture of about 0.15 or greater. The fast-axis collimated beam and the relatively low numerical aperture of the core provide that the Bragg grating only reflects light that propagates about parallel to the longitudinal axis of the fiber. Light reflected from the grating is fed back to the diode-laser for stabilizing the wavelength and spectrally narrowing the diode-laser output beam.

Abstract: Directing an input light beam into a laser diode operated at a power below that required for lasing stimulates emissions, resulting in an amplified output beam. A dynamic steering system can focus the input beam onto front face of the laser diode. The steering system optionally includes an optical element mounted solely on piezoelectric actuators. Control signals for the actuators in the steering system control a base position and cause alternating movements of the optical element. A detector measuring optical power leaking from a back face of the laser diode can determine the power of the amplified beam that exits from the front face, and derivatives of the measured power with respect to the alternating movements indicate required adjustments of the base position. A polarizing beam splitter and quarter-wave plate in the path of beams can separate the input and amplified beams.

Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.