Patents Examined by Michael E. Goendzynski
  • Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
    Patent number: 6033996
    Abstract: Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: March 7, 2000
    Assignee: International Business Machines Corporation
    Inventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope