Abstract: A micro-electro-mechanical system (MEMS) package structure and a method for fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (200) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) and an input-output connecting member (420) are formed on a first bonding surface (100a) of the device wafer (100). The MEMS die (200) is coupled to the first bonding surface (100a) through a bonding layer (500). The MEMS die (200) includes a closed micro-cavity (220) and a second contact pad (220). The first contact pad (410) is electrically connected to a corresponding second contact pad (220). An opening (510) that exposes the input-output connecting member (420) is formed in the bonding layer (500).

Abstract: A method for controlling a clearance control valve of a turbomachine wherein, during a maneuver to increase engine speed in cruise phase, a command to reduce the opening of the clearance control valve is actuated by a Full Authority Digital Engine Control based on a change in the state of a step-climb signal provided by a flight management system in order to increase clearances at the tips of the turbomachine blades and an increase in the opening of the clearance control valve follows its reduction, at the expiry of either of the following two time limits: a first time limit starting at the change in the state of the step-climb signal and determined not to penalize the performance of the engine for too long and a second time limit starting at the end of the maneuver and determined as a function of a thermal time constant of the casing.

Abstract: A manufacturing method for a micromechanical component. The method includes: providing an ASIC component including first front and rear sides, a strip conductor unit being provided at the first front side; providing a MEMS component including second front and rear sides, a micromechanical functional element situated in a cavity at the second front side; bonding the first front side onto the second front side; back-thinning the first rear side; forming vias starting from the back-thinned first rear side and from a redistribution unit on the first rear side, the vias electrically connecting the strip conductor unit to the redistribution unit; forming electrical contact elements on the redistribution unit; and back-thinning the second rear side. The back-thinning of the first and second rear side taking place so that a thickness of the stack made up of ASIC component and MEMS component is less than 300 micrometers.

Abstract: A semiconductor structure includes a glass substrate and a device wafer. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.

Abstract: A ventilation device that enhances the effective longitudinal thrust of a fan assembly installed within a tunnel or other internal space. The nozzle trailing edge (6) is tilted so that it forms an angle (13) with respect to the fan centreline (7), with the surface of the nozzle throughbore being non-cylindrical in shape. The discharged flow (5) is turned away from the surrounding surfaces by a convergent-divergent bellmouth (1).

Abstract: A turbofan engine is provided. The turbofan engine includes a fan comprising a plurality of rotatable fan blades, each fan blade defining a fan tip speed; a turbomachine operably coupled to the fan for driving the fan, the turbomachine comprising a compressor section, a combustion section, and a turbine section in serial flow order and together defining a core air flowpath; and a gear box, wherein the turbomachine is operably coupled to the fan through the gear box, wherein a gear ratio of the gear box is greater than or equal to 1.2 and less than or equal to 3.0; wherein during operation of the turbofan engine at a rated speed the fan tip speed is greater than or equal to 1000 feet per second. In exemplary embodiments, during operation of the turbofan engine at the rated speed the fan pressure ratio is less than or equal to about 1.5.

Abstract: The present disclosure provides a semiconductor device structure with a conductive contact and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate; a conductive contact penetrating through the dielectric layer; and a metal oxide layer separating the conductive contact from the dielectric layer, wherein the conductive contact and the metal oxide layer comprise a same metal.

Abstract: A semiconductor device structure includes a substrate, a first gate structure, a second gate structure, a first well region, and a first structure. The substrate has a first surface and a second surface opposite to the first surface. The first gate structure is disposed on the first surface. The second gate structure is disposed on the first surface. The first well region is in the substrate and between the first gate structure and the second gate structure. The first structure is disposed in the first well region. A shape of the first structure has an acute angle.

Abstract: A method for fabricating a semiconductor device includes providing a base wafer comprising a scribing portion; bonding a first stacked die and a second stacked die onto a front surface of the base wafer through a hybrid bonding process; conformally forming a re-fill layer to cover the first stacked die and the second stacked die; forming a first molding layer to cover the re-fill layer and configure an intermediate semiconductor device comprising the base wafer, the first stacked die, the second stacked die, the re-fill layer, and the first molding layer; and dicing the intermediate semiconductor device along the scribing portion to separate the first stacked die and the second stacked die, the re-fill layer, the first molding layer, and the base wafer.

Abstract: An airfoil for a turbine engine, comprising an outer wall defining an exterior surface bounding an interior and defining a pressure side and a suction side extending between a leading edge and a trailing edge to define a chord-wise direction and extending between a root and a tip to define a span-wise direction, outlets on the exterior surface, and a cooling air supply conduit within the interior and having a supply passage.

Abstract: A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

Abstract: A turbine section of a turbomachine includes a housing that houses and supports the rotating group for rotation about an axis. The housing defines a circumferential inlet passage that extends about the axis. The housing defines a turbine wheel upstream area that is disposed downstream of the circumferential inlet passage and upstream of the turbine wheel. The housing defines an outlet that is downstream of the turbine wheel. Furthermore, the turbine section includes a first flow path that extends from the circumferential inlet passage, through the turbine wheel upstream area, across the turbine wheel, to the outlet. Moreover, the turbine section includes a recirculation flow path that extends from the circumferential inlet passage, through the turbine wheel upstream area, and back to the circumferential inlet passage.

Abstract: An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of a peripheral region of the semiconductor layer, a metal layer facing the semiconductor layer, a graphene layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the graphene layer and the semiconductor and covering the first region.

Abstract: Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Abstract: Methods and system are provided for determining a system capacity. The system capacity may be determined by performing one or more capacity tests. The one or more capacity tests may produce capacity test results.

Abstract: A silicon carbide (carborundum) semiconductor device and a manufacturing method thereof. The manufacturing method of the silicon carbide semiconductor device comprises the following steps of: providing a semiconductor component structure on a silicon carbide substrate, the semiconductor component structure being formed on a front side of the silicon carbide substrate; and forming a multi-layer structure on a back side of the silicon carbide substrate, the multi-layer structure comprising a plurality of ohmic contact layers and a plurality of gettering material layers. By dispersing the gettering material into multiple layers, and by adjusting a thickness combination of the ohmic contact layer and the gettering material layer, even if the gettering material layer is relatively thin (thickness sufficient for balling), a content is still sufficient for gettering carbon and reducing carbon aggregation and accumulation.

Abstract: A semiconductor structure and method for forming the semiconductor are provided. The semiconductor structure includes a first electrode comprising a first portion, a second portion, and a sheet portion connecting the first portion to the second portion. A ferroelectric material is over the sheet portion. A second electrode is over the ferroelectric material.

Abstract: A ram air turbine release system including a turbine defining a rotational axis including at least one notch therein for receiving a plunger to prevent rotation of the turbine mechanically by moving between a first position and a second position, and a first bearing system contacting at least a portion of an outer surface of the plunger configured to reduce friction produced when the plunder moves between the first positon and the second position.

Abstract: Provided is a battery control system-in-package including a package substrate, a wireless charger integrated circuit (IC) module mounted on the package substrate, a wired charger IC module mounted on the package substrate, a battery protection IC module mounted on the package substrate, and a single mold provided on the package substrate to encapsulate the wireless charger IC module, the wired charger IC module, and the battery protection IC module.

Abstract: An analysis device of a vacuum pump discharging gas from a vacuum container in which a process for a target object is performed, comprises: an information generation section configured to generate information on a load on the vacuum pump due to an accumulated substance based on an integrated value of a physical quantity regarding rotary drive of a rotor of the vacuum pump in at least part of a period of the process.