Patents Examined by Michael Ledentritt
  • Semiconductor devices and methods of forming the same
    Patent number: 8637927
    Abstract: Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: January 28, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Heedon Hwang, Ji-Young Min, Jongchul Park, Insang Jeon, Woogwan Shim