Abstract: Techniques for applying context-based security over interfaces in O-RAN environments in mobile networks are disclosed. In some embodiments, a system/process/computer program product for applying context-based security over interfaces in O-RAN environments in mobile networks includes monitoring network traffic on a mobile network at a security platform to identify a GTP-U tunnel session setup message associated with a new session; extracting a plurality of parameters from the GTP-U tunnel session setup message and from F1AP traffic to extract contextual information at the security platform; and enforcing a security policy at the security platform on the new session based on one or more of the plurality of parameters to apply context-based security to the network traffic transported between O-RAN Distributed Unit (O-DU) and O-RAN Centralized Unit Control Plane (O-CU-CP) nodes in an O-RAN environment in the mobile network.

Abstract: A collimator lens converts light beams emitted from a low reflectance facet of a semiconductor laser into parallel light beams. A diffraction grating receives and diffracts the light beams at a predetermined incident position and a predetermined angle of a diffraction face. A turnable mirror has a mirror surface which is positioned opposite the diffractance facet of the diffraction grating, makes the diffracted light beams incident in a reverse optical path to the diffraction face, and returns the incident light beams to the laser. A stationary mirror makes the light beams from the collimator lens incident from a predetermined direction to a predetermined position of the diffraction grating at the side of the mirror surface of a virtual plane extending from the mirror surface of the mirror and at the side of the diffraction face of a virtual plane extending from the diffraction face of the diffraction grating.

Abstract: A chamber for a gas discharge laser is disclosed and may include a chamber housing having a wall, the wall having an inside surface surrounding a chamber volume and an outside surface, the wall also being formed with an orifice. For the chamber, at least one electrical conductor may extend through the orifice to pass an electric current into the chamber volume. A member may be disposed between the conductor and the wall for preventing gas flow through the orifice to allow a chamber pressure to be maintained in the volume. The chamber may further comprise a pressurized compartment disposed adjacent to the orifice for maintaining a pressure on at least a portion of the outside surface of the wall to reduce bowing of the wall near the orifice due to chamber pressure.

Abstract: A method, an apparatus, and a module for producing dual beam from a single laser diode provide for means of simultaneously pumping two individual gain media with orthogonal polarizations. A beam splitter splits the emissive laser beam into two portions based on the polarization. A polarization control element or mechanism adjusts the polarization and the intensity ratio of the separated beam portions. Applications to monolithic microchip lasers include generating new wavelengths based on intracavity beam combining and mixing.

Abstract: A DBR semiconductor laser is controlled in an image projecting apparatus, which includes the DBR laser having a phase and DBR region, a light wavelength converting device for converting fundamental-wave light emitted from the DBR laser into second harmonic wave light, an optical deflector for scanning the second harmonic wave in a one or two-dimensional manner, and a modulating portion for modulating the DBR laser. Coefficient calculating and wavelength adjusting steps are performed within a non-drawing time. The coefficient calculating step calculates at least one coefficient in a relationship between a DBR current to be injected into the DBR region and a phase current to be injected into the phase region for continuously shifting the wavelength of the fundamental-wave light. The wavelength adjusting step changes DBR current injected into the DBR region and phase current injected into the phase region based on the relationship.