Abstract: A semiconductor device and a process for fabricating the device, including, in one embodiment, a silicon substrate; a first interfacial barrier layer on the silicon substrate, in which the first interfacial barrier layer may include aluminum oxide, silicon nitride, silicon oxynitride or a mixture thereof; and a layer of a high-K dielectric material. The device may further include a second interfacial barrier layer on the high-K dielectric material layer, and may further include a polysilicon or polysilicon-germanium gate electrode formed on the second interfacial barrier layer.
Type:
Grant
Filed:
February 27, 2002
Date of Patent:
February 17, 2004
Assignee:
Advanced Micro Devices, Inc.
Inventors:
Arvind Halliyal, Joong S. Jeon, Minh Van Ngo, William G. En, Effiong Ibok
Abstract: The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
Type:
Grant
Filed:
September 26, 1996
Date of Patent:
April 6, 1999
Assignee:
Semiconductor Energy Laboratory Co., Ltd.