Patents Examined by Michael Trihn
  • Patent number: 5963813
    Abstract: A method of forming a field effect transistor includes, a) providing a silicon substrate having impurity doping of a first conductivity type; b) providing source and drain diffusion regions of a second conductivity type within the silicon substrate, the source region and the drain region being spaced from one another to define a channel region therebetween within the silicon substrate; c) providing a gate relative to the silicon substrate operatively adjacent the channel region; and d) providing respective ohmic electrical contacts to the source region and the drain region, the electrical contact to the source region comprising a substrate leaking junction, the electrical connection to the drain region not comprising a substrate leaking junction. A field effect transistor is also disclosed.
    Type: Grant
    Filed: March 5, 1998
    Date of Patent: October 5, 1999
    Assignee: Micron Technology, Inc.
    Inventor: Monte Manning
  • Patent number: 5915173
    Abstract: Disclosed is a thin film transistor formed on a substrate, comprising a patterned gate electrode formed on said substrate; a channel layer formed around said gate electrode with a gate insulating layer interposed therebetween; a interlayer insulating layer formed on said channel layer; and source and drain electrodes formed on both side walls of said channel layer and on both side portions of said interlayer insulating layer, and isolated from each other. Each of the channel and source/drain layers is composed of polysilicon with impurity ions. In the thin film transistor, because each of the source and drain electrodes is formed relatively thicker than the channel layer, them can be significantly reduced in resistance.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: June 22, 1999
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Sung Woo Kwon
  • Patent number: 5158909
    Abstract: A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resisitve layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.
    Type: Grant
    Filed: October 17, 1990
    Date of Patent: October 27, 1992
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Koji Ohtsuka, Yoshiro Kutsuzawa, Kimio Ogata, Hideyuki Ichinosawa