Abstract: A field emission device has a rear substrate (11), a titanium adhesive layer (12) having a striped pattern and disposed on the inner surface of the substrate (11), a tungsten cathode (13) disposed on the adhesive layer (12), a micro-tip (13') protruding from the cathode (13), an aluminum mask layer (14') having a striped pattern and disposed on the cathode (13), an insulating layer (15) having a striped pattern and disposed on the mask layer (14'), a gate (18) having a striped pattern and disposed on the insulating layer (15), and an anode (16) having a striped pattern perpendicular to the striped of the cathode (13) and disposed on a front substrate (19). The micro-tip (13') is formed by simultaneous etching of the tungsten cathode (13), the titanium adhesive layer (12), and the upper aluminum mask (14') resulting in a large internal stress in the micro-tip (13').