Patents Examined by Micheal S. Lebentritt
  • MOS transistors with raised sources and drains
    Patent number: 6429084
    Abstract: In raised source/drain CMOS processing, the prior art problem of lateral epi growth on the gate stack interfering physically with the raised S/D structures and producing device characteristics that vary along the length of the gate and the problem of overetch of the STI oxide during the preclean step is solved by using a sacrificial nitride layer to block both the STI region and the gate stack, together with a process sequence in which the halo and extension implants are performed after the S/D implant anneal.
    Type: Grant
    Filed: June 20, 2001
    Date of Patent: August 6, 2002
    Assignee: International Business Machines Corporation
    Inventors: Heemyong Park, Fariborz Assaderaghi, Dominic J. Schepis